Supply original IRFS59N10DTRLP, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 100V 59A D2PAK

RoHS
Datasheet
Supply original IRFS59N10DTRLP, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRFS59N10DTRLP

Internal code

TCE000055089

Package

TO-263-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 100V 59A D2PAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 100V 59A D2PAK

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Published
2004
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Qualification Status
Not Qualified
Element Configuration
Single
Lead Free
Contains Lead, Lead Free
Part Status
Not For New Designs
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Continuous Drain Current (ID)
59A
Power Dissipation
200W
Current - Continuous Drain (Id) @ 25°C
59A Tc
Nominal Vgs
5.5 V
Vgs (Max)
±30V
Reflow Temperature-Max (S)
30
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Voltage - Rated DC
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Gate To Source Voltage (Vgs)
30V
Height
4.826mm
Drain To Source Breakdown Voltage
100V
Length
10.668mm
Threshold Voltage
5.5V
Vgs(Th) (Max) @ Id
5.5V @ 250μA
Power Dissipation-Max
3.8W Ta 200W Tc
Fall Time (Typ)
12 ns
Resistance
25mOhm
Current Rating
59A
Gate Charge (Qg) (Max) @ Vgs
114nC @ 10V
Rds On (Max) @ Id, Vgs
25m Ω @ 35.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds
2450pF @ 25V
Width
10.54mm
Manufacturer'S Part No.
IRFS59N10DTRLP
Turn-Off Delay Time
20 ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Dual Supply Voltage
100V
Turn On Delay Time
16 ns
Rise Time
90ns

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What is IRFS59N10DTRLP?

IRFS59N10DTRLP is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRFS59N10DTRLP?

IRFS59N10DTRLP is listed with package reference TO-263-3. The current product description is MOSFET N-CH 100V 59A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRFS59N10DTRLP available in stock?

This page currently shows 63924 units in stock and 63924 units available for IRFS59N10DTRLP. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for IRFS59N10DTRLP?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRFS59N10DTRLP by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

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