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IPD088N06N3GBTMA1 Transistors - FETs, MOSFETs - Single by Infineon Technologies

IPD088N06N3GBTMA1 is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO252 under the Infineon Technologies brand listing. MOSFET N-CH 60V 50A TO252-3. TrustCompo combines the available model, brand, hierarchy, and specification details around IPD088N06N3GBTMA1 so buyers can move faster from review to quotation.

RoHS
Datasheet
IPD088N06N3GBTMA1 Transistors - FETs, MOSFETs - Single by Infineon Technologies | TrustCompo
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Part Number

IPD088N06N3GBTMA1

Internal code

TCE000055055

Package

TO252

Key specifications

Series

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 60V 50A TO252-3

key Attributes

-

Technical document

Open The Official Datasheet

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View IPD088N06N3GBTMA1 Datasheet

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Traceability and Certificate of Conformance support available on request
Pre-shipment inspection report support for quality review

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Globally recognized certifications

4 certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

Ordering workflow

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Product overview

Overview

MOSFET N-CH 60V 50A TO252-3

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Popular Specs Surfaced First

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Factory Lead Time
18 Weeks
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Qualification Status
Not Qualified
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Gate Charge (Qg) (Max) @ Vgs
48nC @ 10V
Pbfree Code
no
Mount
Surface Mount
Number Of Pins
3
Terminal Position
SINGLE
Number Of Terminations
2
Pin Count
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
3V
Pulsed Drain Current-Max (IDM)
200A
Fall Time (Typ)
5 ns
Halogen Free
Not Halogen Free
Current - Continuous Drain (Id) @ 25°C
50A Tc
Continuous Drain Current (ID)
50A
Series
OptiMOS™
Power Dissipation
71W
Power Dissipation-Max
71W Tc
Drain-Source On Resistance-Max
0.0088Ohm
Manufacturer'S Part No.
IPD088N06N3GBTMA1
Vgs(Th) (Max) @ Id
4V @ 34μA
Rds On (Max) @ Id, Vgs
8.8m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds
3900pF @ 30V
Turn-Off Delay Time
20 ns
Terminal Finish
Tin (Sn)
Number Of Elements
1
Turn On Delay Time
15 ns
Rise Time
40ns
Configuration
SINGLE WITH BUILT-IN DIODE
Max Dual Supply Voltage
60V

Common questions

Product FAQ

Quick answers for buyers reviewing IPD088N06N3GBTMA1, stock, documentation, and sourcing steps.

What is IPD088N06N3GBTMA1?

IPD088N06N3GBTMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPD088N06N3GBTMA1?

IPD088N06N3GBTMA1 is listed with package reference TO252. The current product description is MOSFET N-CH 60V 50A TO252-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IPD088N06N3GBTMA1 available in stock?

This page currently shows 110332 units in stock and 44702 units available for IPD088N06N3GBTMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for IPD088N06N3GBTMA1?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IPD088N06N3GBTMA1 by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for IPD088N06N3GBTMA1?

Yes. This page links to the datasheet for IPD088N06N3GBTMA1 by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify IPD088N06N3GBTMA1 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IPD088N06N3GBTMA1 before approving the order.

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