Supply original IPD30N08S2L21ATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 75V 30A TO252-3

RoHS
Datasheet
Supply original IPD30N08S2L21ATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPD30N08S2L21ATMA1

Internal code

TCE000055054

Package

TO252

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 75V 30A TO252-3

key Attributes

-

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Overview

MOSFET N-CH 75V 30A TO252-3

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Turn-Off Delay Time
44 ns
Number Of Elements
1
Turn On Delay Time
9 ns
Rise Time
30ns
Max Dual Supply Voltage
75V
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Packaging
Tape & Reel (TR)
Factory Lead Time
10 Weeks
Halogen Free
Halogen Free
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Length
6.73mm
Reference Standard
AEC-Q101
Surface Mount
YES
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Avalanche Energy Rating (Eas)
240 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Continuous Drain Current (ID)
30A
Pulsed Drain Current-Max (IDM)
120A
Current - Continuous Drain (Id) @ 25°C
30A Tc
Drain To Source Breakdown Voltage
75V
Fall Time (Typ)
11 ns
Gate Charge (Qg) (Max) @ Vgs
72nC @ 10V
Series
OptiMOS™
Additional Feature
ULTRA-LOW RESISTANCE
Vgs(Th) (Max) @ Id
2V @ 80μA
Drain-Source On Resistance-Max
0.026Ohm
Height
2.41mm
Power Dissipation
136W
Input Capacitance (Ciss) (Max) @ Vds
1650pF @ 25V
Power Dissipation-Max
136W Tc
Rds On (Max) @ Id, Vgs
20.5m Ω @ 25A, 10V
Manufacturer'S Part No.
IPD30N08S2L21ATMA1

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What is IPD30N08S2L21ATMA1?

IPD30N08S2L21ATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPD30N08S2L21ATMA1?

IPD30N08S2L21ATMA1 is listed with package reference TO252. The current product description is MOSFET N-CH 75V 30A TO252-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 12500 units in stock and 12500 units available for IPD30N08S2L21ATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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