Supply original BSP135H6327XTSA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 600V 120MA SOT-223

RoHS
Datasheet
Supply original BSP135H6327XTSA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

BSP135H6327XTSA1

Internal code

TCE000053667

Package

SOT-223

Key specifications

Serise

SIPMOS®

Min Quantity

1

Description

MOSFET N-CH 600V 120MA SOT-223

key Attributes

-

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Product overview

Overview

MOSFET N-CH 600V 120MA SOT-223

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Detailed Specifications

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Product Parameter

Number Of Elements

1

Product Parameter

Turn-Off Delay Time

28 ns

Product Parameter

FET Feature

Depletion Mode

Product Parameter

Turn On Delay Time

5.4 ns

Product Parameter

Rise Time

5.6ns

Product Parameter

Max Dual Supply Voltage

600V

Number Of Elements
1
Turn-Off Delay Time
28 ns
FET Feature
Depletion Mode
Turn On Delay Time
5.4 ns
Rise Time
5.6ns
Max Dual Supply Voltage
600V
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
10 Weeks
Halogen Free
Halogen Free
Published
2012
Packaging
Cut Tape (CT)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Package / Case
TO-261-4, TO-261AA
Case Connection
DRAIN
Manufacturer
Infineon Technologies
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Power Dissipation
1.8W
Operating Temperature
-55°C~150°C TJ
Power Dissipation-Max
1.8W Ta
Series
SIPMOS®
Reflow Temperature-Max (S)
30
Contact Plating
Tin
Radiation Hardening
No
Height
1.5mm
Mount
Surface Mount
Pbfree Code
yes
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
4
Length
6.5mm
Number Of Pins
4
Pin Count
4
Voltage
600V
Width
3.5mm
Drain To Source Breakdown Voltage
600V
Recovery Time
130 ns
Continuous Drain Current (ID)
120mA
Drive Voltage (Max Rds On,Min Rds On)
0V 10V
Current
12A
Current - Continuous Drain (Id) @ 25°C
120mA Ta
Input Capacitance (Ciss) (Max) @ Vds
146pF @ 25V
Rds On (Max) @ Id, Vgs
45 Ω @ 120mA, 10V
Fall Time (Typ)
182 ns
Vgs(Th) (Max) @ Id
1V @ 94μA
Manufacturer'S Part No.
BSP135H6327XTSA1
Gate Charge (Qg) (Max) @ Vgs
4.9nC @ 5V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99

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BSP135H6327XTSA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for BSP135H6327XTSA1?

BSP135H6327XTSA1 is listed with package reference SOT-223. The current product description is MOSFET N-CH 600V 120MA SOT-223, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 19344 units in stock and 10122 units available for BSP135H6327XTSA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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