Supply original FDP7N60NZ, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 600V 6.5A TO-220

RoHS
Datasheet
Supply original FDP7N60NZ, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

FDP7N60NZ

Internal code

TCE000053410

Package

TO-220

Manufacturer

ON Semiconductor

Key specifications

Serise

UniFET-II™

Min Quantity

1

Description

MOSFET N-CH 600V 6.5A TO-220

key Attributes

-

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Product overview

Overview

MOSFET N-CH 600V 6.5A TO-220

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Tin (Sn)

Product Parameter

Number Of Channels

1

Product Parameter

Number Of Elements

1

Product Parameter

Rise Time

30ns

Product Parameter

Turn-Off Delay Time

40 ns

Product Parameter

Turn On Delay Time

17.5 ns

Terminal Finish
Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Rise Time
30ns
Turn-Off Delay Time
40 ns
Turn On Delay Time
17.5 ns
Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
5 Weeks
Published
2010
Length
10.67mm
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
ON Semiconductor
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
JEDEC-95 Code
TO-220AB
Package / Case
TO-220-3
Weight
1.8g
Vgs (Max)
±30V
Radiation Hardening
No
Pbfree Code
yes
Mount
Through Hole
Number Of Pins
3
Number Of Terminations
3
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
3V
Fall Time (Typ)
25 ns
Vgs(Th) (Max) @ Id
5V @ 250μA
Gate To Source Voltage (Vgs)
30V
Drain To Source Breakdown Voltage
600V
Current - Continuous Drain (Id) @ 25°C
6.5A Tc
Pulsed Drain Current-Max (IDM)
26A
Continuous Drain Current (ID)
6.5A
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Width
4.83mm
Height
20.4mm
Power Dissipation-Max
147W Tc
Power Dissipation
147W
Resistance
1.25MOhm
Series
UniFET-II™
Manufacturer'S Part No.
FDP7N60NZ
Rds On (Max) @ Id, Vgs
1.25 Ω @ 3.25A, 10V
Input Capacitance (Ciss) (Max) @ Vds
730pF @ 25V
Avalanche Energy Rating (Eas)
275 mJ
JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Moisture Sensitivity Level (MSL)
Not Applicable

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What is FDP7N60NZ?

FDP7N60NZ is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDP7N60NZ?

FDP7N60NZ is listed with package reference TO-220. The current product description is MOSFET N-CH 600V 6.5A TO-220, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDP7N60NZ available in stock?

This page currently shows 30583 units in stock and 25471 units available for FDP7N60NZ. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDP7N60NZ by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDP7N60NZ?

Yes. This page links to the datasheet for FDP7N60NZ by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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