What is SI3460BDV-T1-GE3?
SI3460BDV-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
Supply original SI3460BDV-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay
MOSFET N-CH 20V 8A 6-TSOP
RoHS
Datasheet
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Key specifications
Serise
TrenchFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Categroy
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 20V 8A 6-TSOP
key Attributes
-
Technical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
Authenticity Verification
CoC Available on Request
Pre-Shipment Inspection
Responsive RFQ Support
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Structured product content
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Product overview
Overview
MOSFET N-CH 20V 8A 6-TSOP
Full technical breakdown
Detailed Specifications
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Popular Specs Surfaced First
Export Classifications & Environmental
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Export Classifications & Environmental
RoHS Status
ROHS3 Compliant
Export Classifications & Environmental
HTSUS
8541.29.0095
Export Classifications & Environmental
ECCN Code
EAR99
Product Parameter
Number Of Channels
1
Product Parameter
Number Of Elements
1
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
5 ns
Turn-Off Delay Time
25 ns
Rise Time
15ns
Terminal Finish
Pure Matte Tin (Sn)
Part Status
Active
ECCN
EAR99
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Published
2014
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
Vishay
Package / Case
SOT-23-6 Thin, TSOT-23-6
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Nominal Vgs
1 V
Vgs(Th) (Max) @ Id
1V @ 250μA
Series
TrenchFET®
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Vgs (Max)
±8V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Gate To Source Voltage (Vgs)
8V
Height
1mm
Length
3.05mm
Power Dissipation
2W
Threshold Voltage
1V
Pulsed Drain Current-Max (IDM)
20A
Power Dissipation-Max
2W Ta 3.5W Tc
Input Capacitance (Ciss) (Max) @ Vds
860pF @ 10V
Current - Continuous Drain (Id) @ 25°C
8A Tc
Gate Charge (Qg) (Max) @ Vgs
24nC @ 8V
Rds On (Max) @ Id, Vgs
27m Ω @ 5.1A, 4.5V
Weight
19.986414mg
Width
1.65mm
Drain Current-Max (Abs) (ID)
8A
Fall Time (Typ)
5 ns
Drain To Source Breakdown Voltage
20V
Continuous Drain Current (ID)
6.7A
Manufacturer'S Part No.
SI3460BDV-T1-GE3
Drain-Source On Resistance-Max
0.027Ohm
Common questions
Product FAQ
Quick answers for buyers reviewing SI3460BDV-T1-GE3, stock, documentation, and sourcing steps.
What package and description are listed for SI3460BDV-T1-GE3?
SI3460BDV-T1-GE3 is listed with package reference TSOP. The current product description is MOSFET N-CH 20V 8A 6-TSOP, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is SI3460BDV-T1-GE3 available in stock?
This page currently shows 96616 units in stock and 96362 units available for SI3460BDV-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for SI3460BDV-T1-GE3?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SI3460BDV-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for SI3460BDV-T1-GE3?
Yes. This page links to the datasheet for SI3460BDV-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify SI3460BDV-T1-GE3 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SI3460BDV-T1-GE3 before approving the order.
Transistors - FETs, MOSFETs - Single
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