Supply original NTLJF3117PT1G, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET P-CH 20V 2.3A 6-WDFN

RoHS
Datasheet
Supply original NTLJF3117PT1G, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

NTLJF3117PT1G

Internal code

TCE000051727

Package

-

Manufacturer

ON Semiconductor

Key specifications

Serise

µCool™

Min Quantity

1

Description

MOSFET P-CH 20V 2.3A 6-WDFN

key Attributes

-

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ISO 14001

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CoC Available on Request

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Product overview

Overview

MOSFET P-CH 20V 2.3A 6-WDFN

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Detailed Specifications

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Popular Specs Surfaced First

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

HTSUS

8541.21.0095

Export Classifications & Environmental

ECCN Code

EAR99

Product Parameter

Number Of Elements

1

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.21.0095
ECCN Code
EAR99
Number Of Elements
1
Drain To Source Voltage (Vdss)
20V
Rise Time
15ns
FET Feature
Schottky Diode (Isolated)
Turn On Delay Time
5.2 ns
Turn-Off Delay Time
19.8 ns
Part Status
Active
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Element Configuration
Single
Factory Lead Time
2 Weeks
Manufacturer
ON Semiconductor
Height
750μm
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Power Dissipation
1.5W
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Vgs(Th) (Max) @ Id
1V @ 250μA
Terminal Form
C BEND
Surface Mount
YES
Contact Plating
Tin
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Vgs (Max)
±8V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Gate To Source Voltage (Vgs)
8V
Drain To Source Breakdown Voltage
-20V
Length
2mm
Width
2mm
Package / Case
6-WDFN Exposed Pad
Pulsed Drain Current-Max (IDM)
20A
Fall Time (Typ)
15 ns
Series
µCool™
Current - Continuous Drain (Id) @ 25°C
2.3A Ta
Gate Charge (Qg) (Max) @ Vgs
6.2nC @ 4.5V
Power Dissipation-Max
710mW Ta
Continuous Drain Current (ID)
-3.3A
Drain Current-Max (Abs) (ID)
2.3A
Manufacturer'S Part No.
NTLJF3117PT1G
Input Capacitance (Ciss) (Max) @ Vds
531pF @ 10V
Rds On (Max) @ Id, Vgs
100m Ω @ 2A, 4.5V

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What is NTLJF3117PT1G?

NTLJF3117PT1G is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for NTLJF3117PT1G?

NTLJF3117PT1G is listed with package reference -. The current product description is MOSFET P-CH 20V 2.3A 6-WDFN, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 15000 units in stock and 15000 units available for NTLJF3117PT1G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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