Supply original SIB408DK-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET N-CH 30V 7A PPAK SC75-6L

RoHS
Datasheet
Supply original SIB408DK-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SIB408DK-T1-GE3

Internal code

TCE000050905

Package

SC75-

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET N-CH 30V 7A PPAK SC75-6L

key Attributes

-

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ISO 14001

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Overview

MOSFET N-CH 30V 7A PPAK SC75-6L

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Export Classifications & Environmental

JESD-30 Code

R-PDSO-N3

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-N3
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
15 Weeks
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Published
2014
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Height
750μm
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Power Dissipation
2.4W
Series
TrenchFET®
Vgs(Th) (Max) @ Id
2.5V @ 250μA
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Width
1.6mm
Number Of Pins
6
Pin Count
6
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
3
Drain To Source Breakdown Voltage
30V
Fall Time (Typ)
9 ns
Length
1.6mm
Pulsed Drain Current-Max (IDM)
20A
Drain Current-Max (Abs) (ID)
6A
Continuous Drain Current (ID)
7A
Current - Continuous Drain (Id) @ 25°C
7A Tc
Weight
95.991485mg
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 15V
Package / Case
PowerPAK® SC-75-6L
Power Dissipation-Max
2.4W Ta 13W Tc
Avalanche Energy Rating (Eas)
5 mJ
Drain-Source On Resistance-Max
0.04Ohm
Gate Charge (Qg) (Max) @ Vgs
9.5nC @ 10V
Manufacturer'S Part No.
SIB408DK-T1-GE3
Rds On (Max) @ Id, Vgs
40m Ω @ 6A, 10V
Terminal Finish
MATTE TIN
Turn On Delay Time
13 ns
Number Of Channels
1
Number Of Elements
1
Rise Time
11ns
Configuration
SINGLE WITH BUILT-IN DIODE
Turn-Off Delay Time
13 ns

Common questions

Product FAQ

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What is SIB408DK-T1-GE3?

SIB408DK-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SIB408DK-T1-GE3?

SIB408DK-T1-GE3 is listed with package reference SC75-. The current product description is MOSFET N-CH 30V 7A PPAK SC75-6L, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SIB408DK-T1-GE3 available in stock?

This page currently shows 23614 units in stock and 17888 units available for SIB408DK-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for SIB408DK-T1-GE3?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SIB408DK-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.

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