Supply original IRFZ46NLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

TO262 Pre-ordered transistors RoHS

RoHS
Datasheet
Supply original IRFZ46NLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRFZ46NLPBF

Internal code

TCE000050837

Package

TO262

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

TO262 Pre-ordered transistors RoHS

key Attributes

-

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Product overview

Overview

TO262 Pre-ordered transistors RoHS

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Matte Tin (Sn) - with Nickel (Ni) barrier

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

14 ns

Product Parameter

Configuration

SINGLE WITH BUILT-IN DIODE

Product Parameter

Rise Time

76ns

Product Parameter

Turn-Off Delay Time

52 ns

Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Turn On Delay Time
14 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
76ns
Turn-Off Delay Time
52 ns
Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Factory Lead Time
12 Weeks
Published
2004
Peak Reflow Temperature (Cel)
260
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Voltage - Rated DC
55V
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Through Hole
Number Of Pins
3
Terminal Position
SINGLE
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
3
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
4V
Drain To Source Breakdown Voltage
55V
Length
10.668mm
Power Dissipation
120W
Width
4.826mm
Height
9.65mm
Gate Charge (Qg) (Max) @ Vgs
72nC @ 10V
Fall Time (Typ)
57 ns
Current Rating
53A
Current - Continuous Drain (Id) @ 25°C
53A Tc
Input Capacitance (Ciss) (Max) @ Vds
1696pF @ 25V
Continuous Drain Current (ID)
53A
Rds On (Max) @ Id, Vgs
16.5m Ω @ 28A, 10V
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation-Max
3.8W Ta 107W Tc
Manufacturer'S Part No.
IRFZ46NLPBF
Avalanche Energy Rating (Eas)
152 mJ
Pulsed Drain Current-Max (IDM)
180A
Drain-Source On Resistance-Max
0.0165Ohm
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is IRFZ46NLPBF?

IRFZ46NLPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRFZ46NLPBF?

IRFZ46NLPBF is listed with package reference TO262. The current product description is TO262 Pre-ordered transistors RoHS, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRFZ46NLPBF available in stock?

This page currently shows 52136 units in stock and 28941 units available for IRFZ46NLPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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