Supply original IRFS4010PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

RoHS
Datasheet
Supply original IRFS4010PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRFS4010PBF

Internal code

TCE000050831

Package

TO-263-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 100V 180A D2PAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 100V 180A D2PAK

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Detailed Specifications

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Mounting Type
Surface Mount
Termination
SMD/SMT
Part Status
Discontinued
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Reflow Temperature-Max (S)
30
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Width
9.65mm
Height
4.826mm
Drain To Source Breakdown Voltage
100V
Threshold Voltage
4V
Length
10.668mm
Power Dissipation-Max
375W Tc
Fall Time (Typ)
77 ns
Current - Continuous Drain (Id) @ 25°C
180A Tc
Continuous Drain Current (ID)
180A
Pulsed Drain Current-Max (IDM)
720A
Resistance
4.7MOhm
Power Dissipation
375W
Rds On (Max) @ Id, Vgs
4.7m Ω @ 106A, 10V
Input Capacitance (Ciss) (Max) @ Vds
9575pF @ 50V
Gate Charge (Qg) (Max) @ Vgs
215nC @ 10V
Manufacturer'S Part No.
IRFS4010PBF
Turn On Delay Time
21 ns
Rise Time
86ns
Turn-Off Delay Time
100 ns
Number Of Elements
1
Dual Supply Voltage
100V
Reverse Recovery Time
72 ns

Common questions

Product FAQ

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What is IRFS4010PBF?

IRFS4010PBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRFS4010PBF?

IRFS4010PBF is listed with package reference TO-263-3. The current product description is MOSFET N-CH 100V 180A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRFS4010PBF available in stock?

This page currently shows 85959 units in stock and 51071 units available for IRFS4010PBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for IRFS4010PBF?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRFS4010PBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for IRFS4010PBF?

Yes. This page links to the datasheet for IRFS4010PBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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