Supply original IRFS4227PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 200V 62A D2PAK

RoHS
Datasheet
Supply original IRFS4227PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRFS4227PBF

Internal code

TCE000050829

Package

TO-263-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 200V 62A D2PAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 200V 62A D2PAK

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Packaging

Tube

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Published

2005

REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Mounting Type
Surface Mount
Published
2005
Termination
SMD/SMT
Part Status
Discontinued
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Length
10.67mm
Element Configuration
Single
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs (Max)
±30V
Continuous Drain Current (ID)
62A
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs(Th) (Max) @ Id
5V @ 250μA
Gate To Source Voltage (Vgs)
30V
Width
9.65mm
Height
4.826mm
Drain To Source Breakdown Voltage
200V
Nominal Vgs
5 V
Threshold Voltage
5V
Recovery Time
150 ns
Pulsed Drain Current-Max (IDM)
260A
Fall Time (Typ)
31 ns
Power Dissipation
330W
Power Dissipation-Max
330W Tc
Current - Continuous Drain (Id) @ 25°C
62A Tc
Drain-Source On Resistance-Max
0.026Ohm
Operating Temperature
-40°C~175°C TJ
Gate Charge (Qg) (Max) @ Vgs
98nC @ 10V
Rds On (Max) @ Id, Vgs
26m Ω @ 46A, 10V
Input Capacitance (Ciss) (Max) @ Vds
4600pF @ 25V
Manufacturer'S Part No.
IRFS4227PBF
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Turn-Off Delay Time
21 ns
Dual Supply Voltage
240V
Rise Time
20ns
Turn On Delay Time
33 ns

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What is IRFS4227PBF?

IRFS4227PBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRFS4227PBF?

IRFS4227PBF is listed with package reference TO-263-3. The current product description is MOSFET N-CH 200V 62A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRFS4227PBF available in stock?

This page currently shows 49964 units in stock and 15329 units available for IRFS4227PBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRFS4227PBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for IRFS4227PBF?

Yes. This page links to the datasheet for IRFS4227PBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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