Supply original IRFR1018EPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 60V 79A DPAK

RoHS
Datasheet
Supply original IRFR1018EPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRFR1018EPBF

Internal code

TCE000050824

Package

TO-252-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 60V 79A DPAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 60V 79A DPAK

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Detailed Specifications

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Product Attribute

Published

2008

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Packaging

Tube

Product Attribute

Mounting Type

Surface Mount

Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Mounting Type
Surface Mount
Factory Lead Time
15 Weeks
Part Status
Discontinued
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Power Dissipation
110W
Power Dissipation-Max
110W Tc
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Drain To Source Breakdown Voltage
60V
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Length
6.7056mm
Threshold Voltage
4V
Height
2.3876mm
Drain Current-Max (Abs) (ID)
56A
Fall Time (Typ)
46 ns
Continuous Drain Current (ID)
79A
Vgs(Th) (Max) @ Id
4V @ 100μA
Current - Continuous Drain (Id) @ 25°C
56A Tc
Recovery Time
39 ns
Gate Charge (Qg) (Max) @ Vgs
69nC @ 10V
Avalanche Energy Rating (Eas)
88 mJ
Input Capacitance (Ciss) (Max) @ Vds
2290pF @ 50V
Rds On (Max) @ Id, Vgs
8.4m Ω @ 47A, 10V
Manufacturer'S Part No.
IRFR1018EPBF
Drain-Source On Resistance-Max
0.0084Ohm
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Turn On Delay Time
13 ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Rise Time
35ns
Turn-Off Delay Time
55 ns

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What is IRFR1018EPBF?

IRFR1018EPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRFR1018EPBF?

IRFR1018EPBF is listed with package reference TO-252-3. The current product description is MOSFET N-CH 60V 79A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRFR1018EPBF available in stock?

This page currently shows 87602 units in stock and 30059 units available for IRFR1018EPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRFR1018EPBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for IRFR1018EPBF?

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