Supply original IRF3205LPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 55V 110A TO-262

RoHS
Datasheet
Supply original IRF3205LPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF3205LPBF

Internal code

TCE000050813

Package

TO-262

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 55V 110A TO-262

key Attributes

-

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Product overview

Overview

MOSFET N-CH 55V 110A TO-262

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Mounting Type

Through Hole

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Packaging

Tube

Product Attribute

Factory Lead Time

14 Weeks

Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Factory Lead Time
14 Weeks
Published
2002
Peak Reflow Temperature (Cel)
260
Part Status
Not For New Designs
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Voltage - Rated DC
55V
Power Dissipation
200W
Avalanche Energy Rating (Eas)
264 mJ
Gate Charge (Qg) (Max) @ Vgs
146nC @ 10V
Rds On (Max) @ Id, Vgs
8m Ω @ 62A, 10V
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Drain Current-Max (Abs) (ID)
75A
Input Capacitance (Ciss) (Max) @ Vds
3247pF @ 25V
Continuous Drain Current (ID)
110A
Current - Continuous Drain (Id) @ 25°C
110A Tc
Power Dissipation-Max
200W Tc
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Through Hole
Number Of Pins
3
Terminal Position
SINGLE
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
3
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
4V
Drain To Source Breakdown Voltage
55V
Length
10.668mm
Width
4.826mm
Height
9.65mm
Fall Time (Typ)
65 ns
Drain-Source On Resistance-Max
0.008Ohm
Current Rating
110A
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer'S Part No.
IRF3205LPBF
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Rise Time
101ns
Number Of Elements
1
Turn On Delay Time
14 ns
Turn-Off Delay Time
50 ns
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is IRF3205LPBF?

IRF3205LPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF3205LPBF?

IRF3205LPBF is listed with package reference TO-262. The current product description is MOSFET N-CH 55V 110A TO-262, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF3205LPBF available in stock?

This page currently shows 48885 units in stock and 21518 units available for IRF3205LPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for IRF3205LPBF?

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