Supply original IRF2903ZSPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 30V 75A D2PAK

RoHS
Datasheet
Supply original IRF2903ZSPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF2903ZSPBF

Internal code

TCE000050812

Package

TO-263-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 30V 75A D2PAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 30V 75A D2PAK

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Turn-Off Delay Time

48 ns

Product Parameter

Turn On Delay Time

24 ns

Product Parameter

Terminal Finish

Matte Tin (Sn) - with Nickel (Ni) barrier

Product Parameter

Number Of Elements

1

Product Parameter

Rise Time

100ns

Product Attribute

REACH Status

REACH Unaffected

Turn-Off Delay Time
48 ns
Turn On Delay Time
24 ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Rise Time
100ns
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Mounting Type
Surface Mount
Published
2005
Part Status
Discontinued
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Length
10.67mm
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Fall Time (Typ)
37 ns
Drain Current-Max (Abs) (ID)
75A
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Gate To Source Voltage (Vgs)
20V
Drain To Source Breakdown Voltage
30V
Drive Voltage (Max Rds On,Min Rds On)
10V
Height
4.83mm
Width
9.65mm
Threshold Voltage
4V
Current - Continuous Drain (Id) @ 25°C
75A Tc
Gate Charge (Qg) (Max) @ Vgs
240nC @ 10V
Vgs(Th) (Max) @ Id
4V @ 150μA
Continuous Drain Current (ID)
260A
Avalanche Energy Rating (Eas)
820 mJ
Drain-Source On Resistance-Max
0.0024Ohm
Power Dissipation-Max
231W Tc
Input Capacitance (Ciss) (Max) @ Vds
6320pF @ 25V
Manufacturer'S Part No.
IRF2903ZSPBF
Power Dissipation
231W
Recovery Time
51 ns
Rds On (Max) @ Id, Vgs
2.4m Ω @ 75A, 10V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is IRF2903ZSPBF?

IRF2903ZSPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF2903ZSPBF?

IRF2903ZSPBF is listed with package reference TO-263-3. The current product description is MOSFET N-CH 30V 75A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF2903ZSPBF available in stock?

This page currently shows 61342 units in stock and 13245 units available for IRF2903ZSPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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