Supply original IPP50R399CPXKSA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 500V 9A TO-220

RoHS
Datasheet
Supply original IPP50R399CPXKSA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPP50R399CPXKSA1

Internal code

TCE000050809

Package

TO-220

Key specifications

Serise

CoolMOS™

Min Quantity

1

Description

MOSFET N-CH 500V 9A TO-220

key Attributes

-

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Product overview

Overview

MOSFET N-CH 500V 9A TO-220

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Mounting Type

Through Hole

Product Attribute

Published

2008

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Packaging

Tube

Mounting Type
Through Hole
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Factory Lead Time
8 Weeks
Halogen Free
Halogen Free
Qualification Status
Not Qualified
Element Configuration
Single
Part Status
Not For New Designs
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
JEDEC-95 Code
TO-220AB
Package / Case
TO-220-3
Subcategory
FET General Purpose Powers
Pbfree Code
yes
Mount
Through Hole
Number Of Pins
3
Pin Count
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Number Of Terminations
3
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
3V
Case Connection
ISOLATED
Width
4.57mm
Pulsed Drain Current-Max (IDM)
20A
Continuous Drain Current (ID)
9A
Drain Current-Max (Abs) (ID)
9A
Length
10.36mm
Fall Time (Typ)
14 ns
Drain To Source Breakdown Voltage
500V
Power Dissipation
83W
Power Dissipation-Max
83W Tc
Current - Continuous Drain (Id) @ 25°C
9A Ta
Series
CoolMOS™
Gate Charge (Qg) (Max) @ Vgs
4nC @ 10V
Height
15.95mm
Manufacturer'S Part No.
IPP50R399CPXKSA1
Avalanche Energy Rating (Eas)
215 mJ
Input Capacitance (Ciss) (Max) @ Vds
890pF @ 100V
Rds On (Max) @ Id, Vgs
399m Ω @ 4.9A, 10V
Vgs(Th) (Max) @ Id
3.5V @ 330μA
Terminal Finish
Tin (Sn)
Number Of Elements
1
Rise Time
14ns
Turn-Off Delay Time
80 ns
Turn On Delay Time
35 ns
Max Dual Supply Voltage
500V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095

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What is IPP50R399CPXKSA1?

IPP50R399CPXKSA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPP50R399CPXKSA1?

IPP50R399CPXKSA1 is listed with package reference TO-220. The current product description is MOSFET N-CH 500V 9A TO-220, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 71112 units in stock and 71112 units available for IPP50R399CPXKSA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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