Supply original SPD02N50C3, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 560V 1.8A DPAK

RoHS
Datasheet
Supply original SPD02N50C3, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

SPD02N50C3

Internal code

TCE000050698

Package

TO-252-3

Key specifications

Serise

CoolMOS™

Min Quantity

1

Description

MOSFET N-CH 560V 1.8A DPAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 560V 1.8A DPAK

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

RoHS Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Published
2002
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Terminal Form
GULL WING
Qualification Status
Not Qualified
Element Configuration
Single
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Additional Feature
AVALANCHE RATED
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
2
Pin Count
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
3V
Gate Charge (Qg) (Max) @ Vgs
9nC @ 10V
Current Rating
1.8A
Avalanche Energy Rating (Eas)
50 mJ
Fall Time (Typ)
15 ns
Halogen Free
Not Halogen Free
Drain To Source Breakdown Voltage
500V
Drain-Source On Resistance-Max
3Ohm
Current - Continuous Drain (Id) @ 25°C
1.8A Tc
Continuous Drain Current (ID)
1.8A
Power Dissipation
25W
Rds On (Max) @ Id, Vgs
3 Ω @ 1.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 25V
Pulsed Drain Current-Max (IDM)
5.4A
Power Dissipation-Max
25W Tc
Voltage - Rated DC
560V
Series
CoolMOS™
Manufacturer'S Part No.
SPD02N50C3
Vgs(Th) (Max) @ Id
3.9V @ 80μA
Terminal Finish
Tin (Sn)
Number Of Elements
1
Turn-Off Delay Time
70 ns
Turn On Delay Time
10 ns
Rise Time
5ns
Max Dual Supply Voltage
500V

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Product FAQ

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What is SPD02N50C3?

SPD02N50C3 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SPD02N50C3?

SPD02N50C3 is listed with package reference TO-252-3. The current product description is MOSFET N-CH 560V 1.8A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SPD02N50C3 available in stock?

This page currently shows 36430 units in stock and 12318 units available for SPD02N50C3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for SPD02N50C3?

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Is a datasheet available for SPD02N50C3?

Yes. This page links to the datasheet for SPD02N50C3 by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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