Supply original SIR890DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET N-CH 20V 50A PPAK SO-8

RoHS
Datasheet
Supply original SIR890DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SIR890DP-T1-GE3

Internal code

TCE000050386

Package

-

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET N-CH 20V 50A PPAK SO-8

key Attributes

-

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ISO 14001

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Product overview

Overview

MOSFET N-CH 20V 50A PPAK SO-8

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Detailed Specifications

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Popular Specs Surfaced First

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Export Classifications & Environmental

JESD-30 Code

R-PDSO-C5

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-C5
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
15 Weeks
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Published
2013
Manufacturer
Vishay
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Terminal Form
C BEND
Weight
506.605978mg
Series
TrenchFET®
Power Dissipation
5W
Package / Case
PowerPAK® SO-8
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Length
4.9mm
Gate To Source Voltage (Vgs)
20V
Fall Time (Typ)
25 ns
Pulsed Drain Current-Max (IDM)
70A
Current - Continuous Drain (Id) @ 25°C
50A Tc
Continuous Drain Current (ID)
50A
Drain To Source Breakdown Voltage
20V
Threshold Voltage
2.6V
Height
1.04mm
Width
5.89mm
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Power Dissipation-Max
5W Ta 50W Tc
Drain Current-Max (Abs) (ID)
30A
Vgs(Th) (Max) @ Id
2.6V @ 250μA
Manufacturer'S Part No.
SIR890DP-T1-GE3
Rds On (Max) @ Id, Vgs
2.9m Ω @ 10A, 10V
Resistance
2.9mOhm
Input Capacitance (Ciss) (Max) @ Vds
2747pF @ 10V
Terminal Finish
MATTE TIN
Rise Time
18ns
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
30 ns
Turn-Off Delay Time
40 ns
Configuration
SINGLE WITH BUILT-IN DIODE

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What is SIR890DP-T1-GE3?

SIR890DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SIR890DP-T1-GE3?

SIR890DP-T1-GE3 is listed with package reference -. The current product description is MOSFET N-CH 20V 50A PPAK SO-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SIR890DP-T1-GE3 available in stock?

This page currently shows 12307 units in stock and 12307 units available for SIR890DP-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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