Supply original SIR438DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET N-CH 25V 60A PPAK SO-8

RoHS
Datasheet
Supply original SIR438DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SIR438DP-T1-GE3

Internal code

TCE000050385

Package

-

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET N-CH 25V 60A PPAK SO-8

key Attributes

-

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ISO 14001

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Product overview

Overview

MOSFET N-CH 25V 60A PPAK SO-8

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Detailed Specifications

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

JESD-30 Code

R-XDSO-C5

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
JESD-30 Code
R-XDSO-C5
ECCN Code
EAR99
Part Status
Active
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Published
2013
Element Configuration
Single
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Nominal Vgs
1 V
Terminal Form
C BEND
Vgs(Th) (Max) @ Id
2.3V @ 250μA
Weight
506.605978mg
Series
TrenchFET®
Package / Case
PowerPAK® SO-8
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Length
4.9mm
Gate To Source Voltage (Vgs)
20V
Fall Time (Typ)
20 ns
Drain To Source Breakdown Voltage
25V
Drain-Source On Resistance-Max
0.0023Ohm
Current - Continuous Drain (Id) @ 25°C
60A Tc
Continuous Drain Current (ID)
60A
Height
1.04mm
Width
5.89mm
Power Dissipation
5.4W
Power Dissipation-Max
5.4W Ta 83W Tc
Drain Current-Max (Abs) (ID)
40A
Gate Charge (Qg) (Max) @ Vgs
105nC @ 10V
Rds On (Max) @ Id, Vgs
1.8m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds
4560pF @ 10V
Manufacturer'S Part No.
SIR438DP-T1-GE3
Terminal Finish
Matte Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Rise Time
21ns
Turn On Delay Time
37 ns
Turn-Off Delay Time
41 ns

Common questions

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What is SIR438DP-T1-GE3?

SIR438DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SIR438DP-T1-GE3?

SIR438DP-T1-GE3 is listed with package reference -. The current product description is MOSFET N-CH 25V 60A PPAK SO-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SIR438DP-T1-GE3 available in stock?

This page currently shows 93656 units in stock and 93656 units available for SIR438DP-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for SIR438DP-T1-GE3?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SIR438DP-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for SIR438DP-T1-GE3?

Yes. This page links to the datasheet for SIR438DP-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.

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