Supply original BSC040N08NS5ATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 80V 100A 8TDSON

RoHS
Datasheet
Supply original BSC040N08NS5ATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

BSC040N08NS5ATMA1

Internal code

TCE000050144

Package

-

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 80V 100A 8TDSON

key Attributes

-

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Product overview

Overview

MOSFET N-CH 80V 100A 8TDSON

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Contains Lead

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Packaging

Tape & Reel (TR)

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Factory Lead Time
26 Weeks
Halogen Free
Halogen Free
Terminal Position
DUAL
Published
2013
Reach Compliance Code
not_compliant
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Height
1.1mm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM)
400A
Package / Case
8-PowerTDFN
Weight
506.605978mg
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
5
Number Of Pins
8
Terminal Form
FLAT
Power Dissipation-Max
2.5W Ta 104W Tc
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Threshold Voltage
3V
Drain To Source Breakdown Voltage
80V
Continuous Drain Current (ID)
100A
Fall Time (Typ)
6 ns
Power Dissipation
104W
Series
OptiMOS™
Gate Charge (Qg) (Max) @ Vgs
54nC @ 10V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Drain-Source On Resistance-Max
0.004Ohm
Rds On (Max) @ Id, Vgs
4m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds
3900pF @ 40V
Vgs(Th) (Max) @ Id
3.8V @ 67μA
Manufacturer'S Part No.
BSC040N08NS5ATMA1
Terminal Finish
Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Rise Time
8ns
Turn On Delay Time
14 ns
Turn-Off Delay Time
25 ns
Max Dual Supply Voltage
80V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-F5

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What is BSC040N08NS5ATMA1?

BSC040N08NS5ATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for BSC040N08NS5ATMA1?

BSC040N08NS5ATMA1 is listed with package reference -. The current product description is MOSFET N-CH 80V 100A 8TDSON, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is BSC040N08NS5ATMA1 available in stock?

This page currently shows 57372 units in stock and 30422 units available for BSC040N08NS5ATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for BSC040N08NS5ATMA1?

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