Supply original BSC016N06NSATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 60V 30A TDSON-8

RoHS
Datasheet
Supply original BSC016N06NSATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

BSC016N06NSATMA1

Internal code

TCE000049957

Package

-

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 60V 30A TDSON-8

key Attributes

-

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ISO 14001

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Product overview

Overview

MOSFET N-CH 60V 30A TDSON-8

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Contains Lead

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

13 Weeks

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Factory Lead Time
13 Weeks
Halogen Free
Halogen Free
Published
2012
Packaging
Cut Tape (CT)
Terminal Position
DUAL
Reach Compliance Code
not_compliant
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Subcategory
FET General Purpose Powers
Pulsed Drain Current-Max (IDM)
400A
Package / Case
8-PowerTDFN
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Pbfree Code
no
Contact Plating
Tin
Mount
Surface Mount
Number Of Pins
8
Pin Count
8
Terminal Form
FLAT
Power Dissipation
2.5W
Drain To Source Breakdown Voltage
60V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Number Of Terminations
3
Fall Time (Typ)
9 ns
Continuous Drain Current (ID)
30A
Series
OptiMOS™
Gate Charge (Qg) (Max) @ Vgs
71nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
5200pF @ 30V
Vgs(Th) (Max) @ Id
2.8V @ 95μA
Power Dissipation-Max
2.5W Ta 139W Tc
Current - Continuous Drain (Id) @ 25°C
30A Ta 100A Tc
Rds On (Max) @ Id, Vgs
1.6m Ω @ 50A, 10V
Manufacturer'S Part No.
BSC016N06NSATMA1
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-F3
Turn On Delay Time
19 ns
Number Of Channels
1
Number Of Elements
1
Turn-Off Delay Time
35 ns
Rise Time
9ns
Configuration
SINGLE WITH BUILT-IN DIODE
Max Dual Supply Voltage
60V

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What is BSC016N06NSATMA1?

BSC016N06NSATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for BSC016N06NSATMA1?

BSC016N06NSATMA1 is listed with package reference -. The current product description is MOSFET N-CH 60V 30A TDSON-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is BSC016N06NSATMA1 available in stock?

This page currently shows 82469 units in stock and 82469 units available for BSC016N06NSATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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