Supply original BSC039N06NSATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 60V 19A TDSON-8

RoHS
Datasheet
Supply original BSC039N06NSATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

BSC039N06NSATMA1

Internal code

TCE000049949

Package

-

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 60V 19A TDSON-8

key Attributes

-

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Technical document

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ISO 14001

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Product overview

Overview

MOSFET N-CH 60V 19A TDSON-8

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Turn-Off Delay Time

20 ns

Product Parameter

Terminal Finish

Tin (Sn)

Product Parameter

Number Of Channels

1

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

12 ns

Product Parameter

Configuration

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time
20 ns
Terminal Finish
Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
12 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
12ns
Max Dual Supply Voltage
60V
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Factory Lead Time
26 Weeks
Halogen Free
Halogen Free
Published
2012
Packaging
Cut Tape (CT)
Terminal Position
DUAL
Reach Compliance Code
not_compliant
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM)
400A
Package / Case
8-PowerTDFN
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Pbfree Code
no
Mount
Surface Mount
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Terminal Form
FLAT
Power Dissipation
2.5W
Drain To Source Breakdown Voltage
60V
Gate To Source Voltage (Vgs)
20V
Threshold Voltage
2.1V
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Continuous Drain Current (ID)
100A
Avalanche Energy Rating (Eas)
50 mJ
Series
OptiMOS™
Fall Time (Typ)
7 ns
Power Dissipation-Max
2.5W Ta 69W Tc
Feedback Cap-Max (Crss)
44 pF
Drain-Source On Resistance-Max
0.0039Ohm
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 30V
Vgs(Th) (Max) @ Id
2.8V @ 36μA
Manufacturer'S Part No.
BSC039N06NSATMA1
Rds On (Max) @ Id, Vgs
3.9m Ω @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C
19A Ta 100A Tc
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-F5

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What is BSC039N06NSATMA1?

BSC039N06NSATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for BSC039N06NSATMA1?

BSC039N06NSATMA1 is listed with package reference -. The current product description is MOSFET N-CH 60V 19A TDSON-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 88659 units in stock and 65578 units available for BSC039N06NSATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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