Supply original BSC010N04LSATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 40V 100A TDSON-8

RoHS
Datasheet
Supply original BSC010N04LSATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

BSC010N04LSATMA1

Internal code

TCE000049947

Package

-

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 40V 100A TDSON-8

key Attributes

-

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Product overview

Overview

MOSFET N-CH 40V 100A TDSON-8

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Contains Lead

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Published

2003

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Published
2003
Halogen Free
Halogen Free
Packaging
Cut Tape (CT)
Terminal Position
DUAL
Reach Compliance Code
not_compliant
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Factory Lead Time
39 Weeks
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs(Th) (Max) @ Id
2V @ 250μA
Pulsed Drain Current-Max (IDM)
400A
Package / Case
8-PowerTDFN
Pbfree Code
no
Mount
Surface Mount
Number Of Pins
8
Terminal Form
FLAT
Power Dissipation
2.5W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Number Of Terminations
3
Fall Time (Typ)
9 ns
Current - Continuous Drain (Id) @ 25°C
38A Ta 100A Tc
Continuous Drain Current (ID)
100A
Drain To Source Breakdown Voltage
40V
Threshold Voltage
1.2V
Series
OptiMOS™
Gate Charge (Qg) (Max) @ Vgs
95nC @ 10V
Avalanche Energy Rating (Eas)
330 mJ
Rds On (Max) @ Id, Vgs
1m Ω @ 50A, 10V
Manufacturer'S Part No.
BSC010N04LSATMA1
Power Dissipation-Max
2.5W Ta 139W Tc
Input Capacitance (Ciss) (Max) @ Vds
6800pF @ 20V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-F3
Terminal Finish
Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
10 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Turn-Off Delay Time
46 ns
Rise Time
12ns
Max Dual Supply Voltage
40V

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What is BSC010N04LSATMA1?

BSC010N04LSATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for BSC010N04LSATMA1?

BSC010N04LSATMA1 is listed with package reference -. The current product description is MOSFET N-CH 40V 100A TDSON-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is BSC010N04LSATMA1 available in stock?

This page currently shows 73548 units in stock and 73548 units available for BSC010N04LSATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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