Supply original AUIRFR5410, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET P-CH 100V 13A DPAK

RoHS
Datasheet
Supply original AUIRFR5410, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

AUIRFR5410

Internal code

TCE000049914

Package

TO-252-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET P-CH 100V 13A DPAK

key Attributes

-

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Product overview

Overview

MOSFET P-CH 100V 13A DPAK

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Detailed Specifications

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Product Parameter

Turn-Off Delay Time

45 ns

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

15 ns

Product Parameter

Rise Time

58ns

Product Parameter

Drain To Source Voltage (Vdss)

100V

Export Classifications & Environmental

JESD-609 Code

e3

Turn-Off Delay Time
45 ns
Number Of Elements
1
Turn On Delay Time
15 ns
Rise Time
58ns
Drain To Source Voltage (Vdss)
100V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Mounting Type
Surface Mount
Published
2006
Factory Lead Time
13 Weeks
Part Status
Obsolete
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Height
2.39mm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Current - Continuous Drain (Id) @ 25°C
13A Tc
Length
6.73mm
Power Dissipation-Max
66W Tc
Rds On (Max) @ Id, Vgs
205m Ω @ 7.8A, 10V
Pulsed Drain Current-Max (IDM)
52A
Input Capacitance (Ciss) (Max) @ Vds
760pF @ 25V
Power Dissipation
66W
Gate Charge (Qg) (Max) @ Vgs
58nC @ 10V
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Reflow Temperature-Max (S)
30
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Fall Time (Typ)
46 ns
Drain To Source Breakdown Voltage
-100V
Threshold Voltage
-2V
Continuous Drain Current (ID)
13A
Drain-Source On Resistance-Max
0.205Ohm
Manufacturer'S Part No.
AUIRFR5410

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What is AUIRFR5410?

AUIRFR5410 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for AUIRFR5410?

AUIRFR5410 is listed with package reference TO-252-3. The current product description is MOSFET P-CH 100V 13A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is AUIRFR5410 available in stock?

This page currently shows 50279 units in stock and 50279 units available for AUIRFR5410. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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