Supply original BSS138LT1G, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

The BSS138LT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for low-voltage applications and is particularly suitable for switching and amplification purposes in various electronic circuits.

Key Features:

1. Type: N-channel MOSFET
2. Package: The BSS138LT1G is available in a small SOT-23 package, which is a surface-mount device (SMD) that allows for efficient use of PCB space and is suitable for automated assembly processes.
3. Voltage Rating: The maximum drain-source voltage (V_DS) is 50V, making it suitable for a wide range of applications.
4. Current Rating: The maximum continuous drain current (I_D) is approximately 220 mA at a case temperature of 25°C, allowing it to handle moderate loads.
5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage typically ranges from 0.8V to 1.5V, which means it begins to conduct at relatively low gate voltages, making it ideal for low-voltage logic applications.
6. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 3.5 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation.
7. Switching Speed: The BSS138LT1G features fast switching capabilities, making it suitable for high-speed applications.
8. Thermal Characteristics: It has a maximum junction temperature of 150°C, which allows for operation in a variety of thermal environments.

Applications:

The BSS138LT1G is commonly used in:

• Low-side switching: Controlling loads in various electronic devices.
• Level shifting: Translating signals between different voltage levels in digital circuits.
• Signal amplification: Used in analog applications where signal amplification is required.
• Power management: In battery-operated devices for efficient power control.

Electrical Characteristics:

• Gate-Source Voltage (V_GS): Maximum of ±20V.
• Drain-Source Breakdown Voltage (V(BR)DSS): Minimum of 50V.
• Input Capacitance (C_iss): Typically around 30 pF, which affects the speed of the device in switching applications.

Conclusion:

The BSS138LT1G from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a variety of low-voltage applications. Its compact size, low on-resistance, and fast switching capabilities make it a popular choice among engineers and designers for modern electronic circuits.