Supply original IRF6613TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 40V 23A DIRECTFET

RoHS
Datasheet
Supply original IRF6613TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF6613TRPBF

Internal code

TCE000049541

Package

-

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 40V 23A DIRECTFET

key Attributes

-

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Product overview

Overview

MOSFET N-CH 40V 23A DIRECTFET

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Detailed Specifications

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Product Parameter

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Product Parameter

Turn On Delay Time

18 ns

Product Parameter

Number Of Elements

1

Product Parameter

Configuration

SINGLE WITH BUILT-IN DIODE

Product Parameter

Turn-Off Delay Time

27 ns

Product Parameter

Rise Time

47ns

Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Turn On Delay Time
18 ns
Number Of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Turn-Off Delay Time
27 ns
Rise Time
47ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Operating Temperature
-40°C~150°C TJ
Avalanche Energy Rating (Eas)
200 mJ
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
5
Gate To Source Voltage (Vgs)
20V
Terminal Position
BOTTOM
Number Of Terminations
3
Current Rating
23A
Continuous Drain Current (ID)
150mA
Voltage - Rated DC
40V
Length
6.35mm
Drain To Source Breakdown Voltage
40V
Power Dissipation
89W
Additional Feature
LOW CONDUCTION LOSS
Height
508μm
Threshold Voltage
2.25V
Vgs(Th) (Max) @ Id
2.25V @ 250μA
Rds On (Max) @ Id, Vgs
3.4m Ω @ 23A, 10V
Resistance
3.4MOhm
Gate Charge (Qg) (Max) @ Vgs
63nC @ 4.5V
Width
5.0546mm
Fall Time (Typ)
4.9 ns
Manufacturer'S Part No.
IRF6613TRPBF
Power Dissipation-Max
2.8W Ta 89W Tc
Current - Continuous Drain (Id) @ 25°C
23A Ta 150A Tc
Input Capacitance (Ciss) (Max) @ Vds
5950pF @ 15V
Package / Case
DirectFET™ Isometric MT
RoHS Status
RoHS non-compliant
REACH SVHC
No SVHC
Moisture Sensitivity Level (MSL)
3 (168 Hours)
JESD-609 Code
e1
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-XBCC-N3

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What is IRF6613TRPBF?

IRF6613TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF6613TRPBF?

IRF6613TRPBF is listed with package reference -. The current product description is MOSFET N-CH 40V 23A DIRECTFET, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 20142 units in stock and 17998 units available for IRF6613TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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