Supply original IRFH5020TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 200V 5.1A 8PQFN

RoHS
Datasheet
Supply original IRFH5020TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRFH5020TRPBF

Internal code

TCE000049533

Package

-

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 200V 5.1A 8PQFN

key Attributes

-

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Product overview

Overview

MOSFET N-CH 200V 5.1A 8PQFN

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Matte Tin (Sn)

Product Parameter

Number Of Channels

1

Product Parameter

Number Of Elements

1

Product Parameter

Turn-Off Delay Time

21 ns

Product Parameter

Turn On Delay Time

9.3 ns

Product Parameter

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Finish
Matte Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Turn-Off Delay Time
21 ns
Turn On Delay Time
9.3 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
7.7ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Published
2012
Terminal Position
DUAL
Max Junction Temperature (Tj)
150°C
Height
1.05mm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Additional Feature
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
320 mJ
Package / Case
8-PowerTDFN
Radiation Hardening
No
Mount
Surface Mount
Number Of Terminations
5
Number Of Pins
8
Gate To Source Voltage (Vgs)
20V
Width
5mm
Drive Voltage (Max Rds On,Min Rds On)
10V
Length
6mm
Drain To Source Breakdown Voltage
200V
Threshold Voltage
5V
Fall Time (Typ)
6 ns
Gate Charge (Qg) (Max) @ Vgs
54nC @ 10V
Resistance
55MOhm
Power Dissipation
3.6W
Continuous Drain Current (ID)
5.1A
Current - Continuous Drain (Id) @ 25°C
5.1A Ta
Pulsed Drain Current-Max (IDM)
63A
Manufacturer'S Part No.
IRFH5020TRPBF
Vgs(Th) (Max) @ Id
5V @ 150μA
Rds On (Max) @ Id, Vgs
55m Ω @ 7.5A, 10V
Drain Current-Max (Abs) (ID)
43A
Power Dissipation-Max
3.6W Ta 8.3W Tc
Input Capacitance (Ciss) (Max) @ Vds
2290pF @ 100V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-N5

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What is IRFH5020TRPBF?

IRFH5020TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRFH5020TRPBF?

IRFH5020TRPBF is listed with package reference -. The current product description is MOSFET N-CH 200V 5.1A 8PQFN, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 87926 units in stock and 87926 units available for IRFH5020TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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