Supply original IRFR3711TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 20V 100A DPAK

RoHS
Datasheet
Supply original IRFR3711TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRFR3711TRPBF

Internal code

TCE000049527

Package

TO-252-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 20V 100A DPAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 20V 100A DPAK

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Published
2005
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Part Status
Not For New Designs
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Continuous Drain Current (ID)
110A
Vgs(Th) (Max) @ Id
3V @ 250μA
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Terminal Position
SINGLE
Number Of Terminations
2
Width
6.22mm
Gate To Source Voltage (Vgs)
20V
Length
6.7056mm
Height
2.3876mm
Power Dissipation
120W
Voltage - Rated DC
20V
Current Rating
100A
Pulsed Drain Current-Max (IDM)
440A
Resistance
6.5mOhm
Avalanche Energy Rating (Eas)
460 mJ
Drain To Source Breakdown Voltage
20V
Fall Time (Typ)
12 ns
Current - Continuous Drain (Id) @ 25°C
100A Tc
Rds On (Max) @ Id, Vgs
6.5m Ω @ 15A, 10V
Power Dissipation-Max
2.5W Ta 120W Tc
Input Capacitance (Ciss) (Max) @ Vds
2980pF @ 10V
Manufacturer'S Part No.
IRFR3711TRPBF
Gate Charge (Qg) (Max) @ Vgs
44nC @ 4.5V
Turn-Off Delay Time
17 ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Turn On Delay Time
12 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
220ns

Common questions

Product FAQ

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What is IRFR3711TRPBF?

IRFR3711TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRFR3711TRPBF?

IRFR3711TRPBF is listed with package reference TO-252-3. The current product description is MOSFET N-CH 20V 100A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRFR3711TRPBF available in stock?

This page currently shows 97595 units in stock and 89615 units available for IRFR3711TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRFR3711TRPBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

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