Supply original IRF5210LPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET P-CH 100V 38A TO-262

RoHS
Datasheet
Supply original IRF5210LPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF5210LPBF

Internal code

TCE000049523

Package

TO-262

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET P-CH 100V 38A TO-262

key Attributes

-

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Product overview

Overview

MOSFET P-CH 100V 38A TO-262

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Detailed Specifications

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Product Attribute

Part Status

Active

Product Attribute

Mounting Type

Through Hole

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Packaging

Tube

Product Attribute

Lead Free

Contains Lead

Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Packaging
Tube
Lead Free
Contains Lead
Factory Lead Time
12 Weeks
Published
1998
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Element Configuration
Single
Length
10.54mm
Height
9.652mm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Power Dissipation
200W
Continuous Drain Current (ID)
-40A
Voltage - Rated DC
-100V
Additional Feature
HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Through Hole
Number Of Pins
3
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
3
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
4V
Drain To Source Breakdown Voltage
-100V
Width
4.69mm
Fall Time (Typ)
55 ns
Resistance
60MOhm
Current - Continuous Drain (Id) @ 25°C
38A Tc
Input Capacitance (Ciss) (Max) @ Vds
2780pF @ 25V
Rds On (Max) @ Id, Vgs
60m Ω @ 38A, 10V
Power Dissipation-Max
3.1W Ta 170W Tc
Gate Charge (Qg) (Max) @ Vgs
230nC @ 10V
Current Rating
-40A
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer'S Part No.
IRF5210LPBF
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Turn On Delay Time
14 ns
Dual Supply Voltage
100V
Rise Time
63ns
Turn-Off Delay Time
72 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is IRF5210LPBF?

IRF5210LPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF5210LPBF?

IRF5210LPBF is listed with package reference TO-262. The current product description is MOSFET P-CH 100V 38A TO-262, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF5210LPBF available in stock?

This page currently shows 41516 units in stock and 34507 units available for IRF5210LPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for IRF5210LPBF?

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