Supply original FDP18N50, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 500V 18A TO-220

RoHS
Datasheet
Supply original FDP18N50, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

FDP18N50

Internal code

TCE000048076

Package

TO-220

Manufacturer

ON Semiconductor

Key specifications

Serise

UniFET™

Min Quantity

1

Description

MOSFET N-CH 500V 18A TO-220

key Attributes

-

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Product overview

Overview

MOSFET N-CH 500V 18A TO-220

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Turn On Delay Time

55 ns

Product Parameter

Number Of Elements

1

Product Parameter

Turn-Off Delay Time

95 ns

Product Parameter

Rise Time

165ns

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Turn On Delay Time
55 ns
Number Of Elements
1
Turn-Off Delay Time
95 ns
Rise Time
165ns
JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Moisture Sensitivity Level (MSL)
Not Applicable
Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Factory Lead Time
9 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Published
2013
Height
9.4mm
Element Configuration
Single
Manufacturer
ON Semiconductor
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
JEDEC-95 Code
TO-220AB
Package / Case
TO-220-3
Current - Continuous Drain (Id) @ 25°C
18A Tc
Current Rating
18A
Vgs (Max)
±30V
Contact Plating
Tin
Radiation Hardening
No
Pbfree Code
yes
Mount
Through Hole
Number Of Pins
3
Number Of Terminations
3
Length
10.1mm
Width
4.7mm
Drive Voltage (Max Rds On,Min Rds On)
10V
Voltage - Rated DC
500V
Additional Feature
FAST SWITCHING
Vgs(Th) (Max) @ Id
5V @ 250μA
Gate To Source Voltage (Vgs)
30V
Threshold Voltage
5V
Series
UniFET™
Drain To Source Breakdown Voltage
500V
Continuous Drain Current (ID)
18A
Current
18A
Fall Time (Typ)
90 ns
Input Capacitance (Ciss) (Max) @ Vds
2860pF @ 25V
Rds On (Max) @ Id, Vgs
265m Ω @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Resistance
265MOhm
Avalanche Energy Rating (Eas)
945 mJ
Voltage
500V
Power Dissipation
235W
Power Dissipation-Max
235W Tc
Manufacturer'S Part No.
FDP18N50

Common questions

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What is FDP18N50?

FDP18N50 is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDP18N50?

FDP18N50 is listed with package reference TO-220. The current product description is MOSFET N-CH 500V 18A TO-220, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDP18N50 available in stock?

This page currently shows 37975 units in stock and 15011 units available for FDP18N50. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for FDP18N50?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDP18N50 by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDP18N50?

Yes. This page links to the datasheet for FDP18N50 by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify FDP18N50 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDP18N50 before approving the order.

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