Supply original SI3437DV-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET P-CH 150V 1.4A 6-TSOP

RoHS
Datasheet
Supply original SI3437DV-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SI3437DV-T1-GE3

Internal code

TCE000048003

Package

TSOP

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET P-CH 150V 1.4A 6-TSOP

key Attributes

-

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Product overview

Overview

MOSFET P-CH 150V 1.4A 6-TSOP

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

14 Weeks

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Published
2015
Element Configuration
Single
Manufacturer
Vishay
Package / Case
SOT-23-6 Thin, TSOT-23-6
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Threshold Voltage
-4V
Series
TrenchFET®
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Gate To Source Voltage (Vgs)
20V
Height
1mm
Drain To Source Breakdown Voltage
-150V
Length
3.05mm
Power Dissipation
2W
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Weight
19.986414mg
Width
1.65mm
Fall Time (Typ)
14 ns
Continuous Drain Current (ID)
1.1A
Power Dissipation-Max
2W Ta 3.2W Tc
Rds On (Max) @ Id, Vgs
750m Ω @ 1.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds
510pF @ 50V
Current - Continuous Drain (Id) @ 25°C
1.4A Tc
Drain-Source On Resistance-Max
0.75Ohm
Manufacturer'S Part No.
SI3437DV-T1-GE3
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
14 ns
Drain To Source Voltage (Vdss)
150V
Turn-Off Delay Time
23 ns
Rise Time
29ns

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What is SI3437DV-T1-GE3?

SI3437DV-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SI3437DV-T1-GE3?

SI3437DV-T1-GE3 is listed with package reference TSOP. The current product description is MOSFET P-CH 150V 1.4A 6-TSOP, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SI3437DV-T1-GE3 available in stock?

This page currently shows 34957 units in stock and 12721 units available for SI3437DV-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for SI3437DV-T1-GE3?

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