Supply original SI3442BDV-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET N-CH 20V 3A 6-TSOP

RoHS
Datasheet
Supply original SI3442BDV-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SI3442BDV-T1-E3

Internal code

TCE000048002

Package

TSOP

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET N-CH 20V 3A 6-TSOP

key Attributes

-

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Product overview

Overview

MOSFET N-CH 20V 3A 6-TSOP

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

RoHS non-compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS non-compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Published
2009
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
Vishay
Power Dissipation
20mW
Package / Case
SOT-23-6 Thin, TSOT-23-6
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Series
TrenchFET®
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Nominal Vgs
1.8 V
Threshold Voltage
1.8V
Height
1mm
Continuous Drain Current (ID)
3A
Current - Continuous Drain (Id) @ 25°C
3A Ta
Drain Current-Max (Abs) (ID)
3A
Gate To Source Voltage (Vgs)
12V
Length
3.05mm
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Vgs(Th) (Max) @ Id
1.8V @ 250μA
Weight
19.986414mg
Width
1.65mm
Fall Time (Typ)
15 ns
Drain To Source Breakdown Voltage
20V
Gate Charge (Qg) (Max) @ Vgs
5nC @ 4.5V
Rds On (Max) @ Id, Vgs
57m Ω @ 4A, 4.5V
Power Dissipation-Max
860mW Ta
Manufacturer'S Part No.
SI3442BDV-T1-E3
Input Capacitance (Ciss) (Max) @ Vds
295pF @ 10V
Resistance
57mOhm
Terminal Finish
Matte Tin (Sn)
Turn-Off Delay Time
20 ns
Number Of Channels
1
Number Of Elements
1
Rise Time
50ns
Turn On Delay Time
35 ns

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What is SI3442BDV-T1-E3?

SI3442BDV-T1-E3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SI3442BDV-T1-E3?

SI3442BDV-T1-E3 is listed with package reference TSOP. The current product description is MOSFET N-CH 20V 3A 6-TSOP, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SI3442BDV-T1-E3 available in stock?

This page currently shows 33448 units in stock and 29728 units available for SI3442BDV-T1-E3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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