Supply original IRFR3607PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 75V 80A DPAK

RoHS
Datasheet
Supply original IRFR3607PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRFR3607PBF

Internal code

TCE000045559

Package

TO-252-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 75V 80A DPAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 75V 80A DPAK

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Detailed Specifications

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Product Attribute

Published

2008

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Packaging

Tube

Product Attribute

Mounting Type

Surface Mount

Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Mounting Type
Surface Mount
Termination
SMD/SMT
Part Status
Discontinued
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Nominal Vgs
4 V
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Power Dissipation-Max
140W Tc
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Recovery Time
50 ns
Length
6.7056mm
Threshold Voltage
4V
Height
2.3876mm
Power Dissipation
140W
Drain Current-Max (Abs) (ID)
56A
Continuous Drain Current (ID)
80A
Drain To Source Breakdown Voltage
75V
Fall Time (Typ)
96 ns
Resistance
9MOhm
Vgs(Th) (Max) @ Id
4V @ 100μA
Current - Continuous Drain (Id) @ 25°C
56A Tc
Rds On (Max) @ Id, Vgs
9m Ω @ 46A, 10V
Gate Charge (Qg) (Max) @ Vgs
84nC @ 10V
Manufacturer'S Part No.
IRFR3607PBF
Input Capacitance (Ciss) (Max) @ Vds
3070pF @ 50V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Turn On Delay Time
16 ns
Dual Supply Voltage
75V
Rise Time
110ns
Turn-Off Delay Time
43 ns

Common questions

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What is IRFR3607PBF?

IRFR3607PBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRFR3607PBF?

IRFR3607PBF is listed with package reference TO-252-3. The current product description is MOSFET N-CH 75V 80A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRFR3607PBF available in stock?

This page currently shows 70919 units in stock and 43496 units available for IRFR3607PBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRFR3607PBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for IRFR3607PBF?

Yes. This page links to the datasheet for IRFR3607PBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IRFR3607PBF before approving the order.

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