Supply original IPB036N12N3GATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 120V 180A TO263-7

RoHS
Datasheet
Supply original IPB036N12N3GATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPB036N12N3GATMA1

Internal code

TCE000045542

Package

TO263

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 120V 180A TO263-7

key Attributes

-

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Product overview

Overview

MOSFET N-CH 120V 180A TO263-7

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Tin (Sn)

Product Parameter

Number Of Channels

1

Product Parameter

Number Of Elements

1

Product Parameter

Configuration

SINGLE WITH BUILT-IN DIODE

Product Parameter

Turn On Delay Time

35 ns

Product Parameter

Rise Time

52ns

Terminal Finish
Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Turn On Delay Time
35 ns
Rise Time
52ns
Max Dual Supply Voltage
120V
Turn-Off Delay Time
76 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PSSO-G6
Part Status
Active
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Factory Lead Time
13 Weeks
Packaging
Tape & Reel (TR)
Halogen Free
Halogen Free
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Qualification Status
Not Qualified
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Power Dissipation
300W
Power Dissipation-Max
300W Tc
Avalanche Energy Rating (Eas)
900 mJ
Pbfree Code
no
Mount
Surface Mount
Terminal Position
SINGLE
Number Of Terminations
6
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Number Of Pins
7
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
3V
Pin Count
4
Height
4.5mm
Series
OptiMOS™
Fall Time (Typ)
21 ns
Package / Case
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Drain To Source Breakdown Voltage
120V
Current - Continuous Drain (Id) @ 25°C
180A Tc
Continuous Drain Current (ID)
180A
Vgs(Th) (Max) @ Id
4V @ 270μA
Rds On (Max) @ Id, Vgs
3.6m Ω @ 100A, 10V
Manufacturer'S Part No.
IPB036N12N3GATMA1
Gate Charge (Qg) (Max) @ Vgs
211nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
13800pF @ 60V
Drain-Source On Resistance-Max
0.0036Ohm

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What is IPB036N12N3GATMA1?

IPB036N12N3GATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPB036N12N3GATMA1?

IPB036N12N3GATMA1 is listed with package reference TO263. The current product description is MOSFET N-CH 120V 180A TO263-7, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IPB036N12N3GATMA1 available in stock?

This page currently shows 24475 units in stock and 24475 units available for IPB036N12N3GATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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