Supply original FDB3652, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 100V 61A TO-263AB

RoHS
Datasheet
Supply original FDB3652, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

FDB3652

Internal code

TCE000045464

Package

TO-

Manufacturer

ON Semiconductor

Key specifications

Serise

PowerTrench®

Min Quantity

1

Description

MOSFET N-CH 100V 61A TO-263AB

key Attributes

-

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ISO 14001

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CoC Available on Request

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Overview

MOSFET N-CH 100V 61A TO-263AB

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Number Of Elements
1
Turn-Off Delay Time
26 ns
Turn On Delay Time
12 ns
Rise Time
85ns
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Factory Lead Time
36 Weeks
Element Configuration
Single
Part Status
Not For New Designs
Manufacturer
ON Semiconductor
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation
150W
Power Dissipation-Max
150W Tc
Gate Charge (Qg) (Max) @ Vgs
53nC @ 10V
Series
PowerTrench®
Weight
1.31247g
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Reflow Temperature-Max (S)
30
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
2
Gate To Source Voltage (Vgs)
20V
Width
6.35mm
Voltage - Rated DC
100V
Height
6.35mm
Length
6.35mm
Drain To Source Breakdown Voltage
100V
Threshold Voltage
4V
Resistance
16MOhm
Fall Time (Typ)
45 ns
Drain Current-Max (Abs) (ID)
9A
Current Rating
61A
Continuous Drain Current (ID)
61A
Input Capacitance (Ciss) (Max) @ Vds
2880pF @ 25V
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 20 hours ago)
Manufacturer'S Part No.
FDB3652
Current - Continuous Drain (Id) @ 25°C
9A Ta 61A Tc
Rds On (Max) @ Id, Vgs
16m Ω @ 61A, 10V

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What is FDB3652?

FDB3652 is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDB3652?

FDB3652 is listed with package reference TO-. The current product description is MOSFET N-CH 100V 61A TO-263AB, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDB3652 available in stock?

This page currently shows 67009 units in stock and 67009 units available for FDB3652. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDB3652 by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDB3652?

Yes. This page links to the datasheet for FDB3652 by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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