Supply original STD16N65M5, Transistors - FETs, MOSFETs - Single, by STMicroelectronics

MOSFET N-CH 650V 12A DPAK

RoHS
Datasheet
Supply original STD16N65M5, Transistors - FETs, MOSFETs - Single, by STMicroelectronics | TrustCompo

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Part Number

STD16N65M5

Internal code

TCE000045241

Package

TO-252-3

Manufacturer

STMicroelectronics

Key specifications

Serise

MDmesh™ V

Min Quantity

1

Description

MOSFET N-CH 650V 12A DPAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 650V 12A DPAK

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Detailed Specifications

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Product Parameter

Number Of Elements

1

Product Parameter

Turn-Off Delay Time

30 ns

Product Parameter

Rise Time

9ns

Product Parameter

Turn On Delay Time

25 ns

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Number Of Elements
1
Turn-Off Delay Time
30 ns
Rise Time
9ns
Turn On Delay Time
25 ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Factory Lead Time
17 Weeks
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
STMicroelectronics
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
200 mJ
Base Part Number
STD16
Current - Continuous Drain (Id) @ 25°C
12A Tc
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Reflow Temperature-Max (S)
30
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Pin Count
3
Height
2.4mm
Width
6.2mm
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs(Th) (Max) @ Id
5V @ 250μA
Gate To Source Voltage (Vgs)
25V
Vgs (Max)
±25V
Length
6.6mm
Threshold Voltage
4V
Pulsed Drain Current-Max (IDM)
48A
Continuous Drain Current (ID)
12A
Operating Temperature
150°C TJ
Fall Time (Typ)
7 ns
Gate Charge (Qg) (Max) @ Vgs
45nC @ 10V
Additional Feature
ULTRA-LOW RESISTANCE
Power Dissipation
90W
Power Dissipation-Max
90W Tc
Drain To Source Breakdown Voltage
650V
Rds On (Max) @ Id, Vgs
299m Ω @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1250pF @ 100V
Manufacturer'S Part No.
STD16N65M5
Series
MDmesh™ V
Resistance
299mOhm
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99

Common questions

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What is STD16N65M5?

STD16N65M5 is a Transistors - FETs, MOSFETs - Single component from STMicroelectronics. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for STD16N65M5?

STD16N65M5 is listed with package reference TO-252-3. The current product description is MOSFET N-CH 650V 12A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is STD16N65M5 available in stock?

This page currently shows 37147 units in stock and 37147 units available for STD16N65M5. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for STD16N65M5?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for STD16N65M5 by STMicroelectronics. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for STD16N65M5?

Yes. This page links to the datasheet for STD16N65M5 by STMicroelectronics, so engineers and buyers can review package, ratings, and application details before purchase.

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