Supply original SIR492DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET N-CH 12V 40A PPAK SO-8

RoHS
Datasheet
Supply original SIR492DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SIR492DP-T1-GE3

Internal code

TCE000045180

Package

-

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET N-CH 12V 40A PPAK SO-8

key Attributes

-

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ISO 14001

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Product overview

Overview

MOSFET N-CH 12V 40A PPAK SO-8

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

JESD-30 Code

R-XDSO-C5

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
JESD-30 Code
R-XDSO-C5
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Turn-Off Delay Time
53 ns
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
27 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Drain To Source Voltage (Vdss)
12V
Rise Time
125ns
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2005
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
1V @ 250μA
Current - Continuous Drain (Id) @ 25°C
40A Tc
Terminal Form
C BEND
Subcategory
FET General Purpose Powers
Weight
506.605978mg
Series
TrenchFET®
Continuous Drain Current (ID)
40A
Package / Case
PowerPAK® SO-8
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Length
4.9mm
Vgs (Max)
±8V
Gate To Source Voltage (Vgs)
8V
Pulsed Drain Current-Max (IDM)
60A
Threshold Voltage
1V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Height
1.04mm
Fall Time (Typ)
12 ns
Width
5.89mm
Drain Current-Max (Abs) (ID)
27A
Power Dissipation-Max
4.2W Ta 36W Tc
Operating Temperature
-50°C~150°C TJ
Manufacturer'S Part No.
SIR492DP-T1-GE3
Resistance
4.7MOhm
Power Dissipation
4.2W
Rds On (Max) @ Id, Vgs
3.8m Ω @ 15A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
3720pF @ 6V
Gate Charge (Qg) (Max) @ Vgs
110nC @ 8V

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What is SIR492DP-T1-GE3?

SIR492DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SIR492DP-T1-GE3?

SIR492DP-T1-GE3 is listed with package reference -. The current product description is MOSFET N-CH 12V 40A PPAK SO-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SIR492DP-T1-GE3 available in stock?

This page currently shows 74388 units in stock and 14971 units available for SIR492DP-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for SIR492DP-T1-GE3?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SIR492DP-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for SIR492DP-T1-GE3?

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