Supply original NTR4501NT1G, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

The NTR4501NT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for a variety of applications, including power management, switching, and amplification in electronic circuits.

Key Features:

1. Type: N-channel MOSFET

   • The NTR4501NT1G is specifically designed to conduct current when a positive voltage is applied to its gate terminal relative to its source terminal.

2. Voltage Rating:

   • The device typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.

3. Current Rating:

   • It can handle a continuous drain current (I_D) of approximately 45A, which allows it to manage significant power loads effectively.

4. R_DS(on):

   • The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved efficiency in switching applications.

5. Gate Threshold Voltage (V_GS(th)):

   • The gate threshold voltage is typically in the range of 1V to 3V, which indicates the minimum gate voltage required to turn the MOSFET on.

6. Package Type:

   • The NTR4501NT1G is available in a compact surface-mount package, specifically the DPAK (TO-252) or similar, which facilitates easy integration into circuit boards and helps with thermal management.

7. Thermal Characteristics:

   • The device is designed to operate over a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.

8. Applications:

   • Common applications include power supplies, motor drivers, LED drivers, and other power management systems where efficient switching is crucial.

9. Switching Speed:

   • The NTR4501NT1G features fast switching capabilities, which is essential for high-frequency applications, reducing the time it takes to turn on and off.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): Typically around 50W, depending on the thermal management and PCB layout.
• Input Capacitance (C_iss): Low input capacitance, which contributes to faster switching times.

Conclusion:

The NTR4501NT1G from ON Semiconductor is a robust and efficient N-channel MOSFET that is well-suited for a variety of power management applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it an excellent choice for designers looking to optimize performance in their electronic circuits.