Supply original BUZ30A, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 200V 21A TO-220AB

RoHS
Datasheet
Supply original BUZ30A, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

BUZ30A

Internal code

TCE000045053

Package

TO-

Key specifications

Serise

SIPMOS®

Min Quantity

1

Description

MOSFET N-CH 200V 21A TO-220AB

key Attributes

-

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4 certifications

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Overview

MOSFET N-CH 200V 21A TO-220AB

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

RoHS Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Number Of Elements
1
Turn-Off Delay Time
250 ns
Turn On Delay Time
30 ns
Dual Supply Voltage
200V
Rise Time
70ns
Reverse Recovery Time
180 ns
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Pitch
2.54mm
Packaging
Tube
Lead Free
Contains Lead
Published
2005
Part Status
Obsolete
Length
10mm
Qualification Status
Not Qualified
Width
4.4mm
Current Rating
21A
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Series
SIPMOS®
Additional Feature
AVALANCHE RATED
JEDEC-95 Code
TO-220AB
Package / Case
TO-220-3
Nominal Vgs
3 V
Mount
Through Hole
Number Of Pins
3
Pin Count
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Number Of Terminations
3
Termination
Through Hole
Voltage - Rated DC
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Drain To Source Breakdown Voltage
200V
Fall Time (Typ)
90 ns
Power Dissipation
125W
Power Dissipation-Max
125W Tc
Vgs(Th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1900pF @ 25V
Resistance
130mOhm
Current - Continuous Drain (Id) @ 25°C
21A Tc
Continuous Drain Current (ID)
21A
Pulsed Drain Current-Max (IDM)
84A
Avalanche Energy Rating (Eas)
450 mJ
Height
9.25mm
Manufacturer'S Part No.
BUZ30A
Rds On (Max) @ Id, Vgs
130m Ω @ 13.5A, 10V

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What is BUZ30A?

BUZ30A is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for BUZ30A?

BUZ30A is listed with package reference TO-. The current product description is MOSFET N-CH 200V 21A TO-220AB, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is BUZ30A available in stock?

This page currently shows 84724 units in stock and 80590 units available for BUZ30A. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for BUZ30A?

Yes. This page links to the datasheet for BUZ30A by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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