Supply original IRF7769L2TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 100V DIRECTFET L8

RoHS
Datasheet
Supply original IRF7769L2TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF7769L2TRPBF

Internal code

TCE000044565

Package

2010

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 100V DIRECTFET L8

key Attributes

-

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Product overview

Overview

MOSFET N-CH 100V DIRECTFET L8

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Packaging

Tape & Reel (TR)

Product Attribute

Factory Lead Time

10 Weeks

Product Attribute

Published

2010

REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Factory Lead Time
10 Weeks
Published
2010
Peak Reflow Temperature (Cel)
260
Part Status
Not For New Designs
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Width
7.112mm
Gate To Source Voltage (Vgs)
20V
Terminal Position
BOTTOM
Number Of Terminations
9
Drive Voltage (Max Rds On,Min Rds On)
10V
Continuous Drain Current (ID)
20A
Drain To Source Breakdown Voltage
100V
Avalanche Energy Rating (Eas)
260 mJ
Fall Time (Typ)
41 ns
Number Of Pins
11
Drain-Source On Resistance-Max
0.0035Ohm
Power Dissipation
3.3W
Pulsed Drain Current-Max (IDM)
500A
Drain Current-Max (Abs) (ID)
395A
Package / Case
DirectFET™ Isometric L8
Rds On (Max) @ Id, Vgs
3.5m Ω @ 74A, 10V
Power Dissipation-Max
3.3W Ta 125W Tc
Height
676μm
Manufacturer'S Part No.
IRF7769L2TRPBF
Current - Continuous Drain (Id) @ 25°C
375A Tc
Input Capacitance (Ciss) (Max) @ Vds
11560pF @ 25V
Recovery Time
112 ns
Length
9.144mm
Gate Charge (Qg) (Max) @ Vgs
300nC @ 10V
Nominal Vgs
2.7 V
Terminal Finish
TIN SILVER COPPER
Number Of Channels
1
Number Of Elements
1
Rise Time
32ns
Configuration
SINGLE WITH BUILT-IN DIODE
Turn-Off Delay Time
92 ns
Turn On Delay Time
44 ns
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-609 Code
e1
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-XBCC-N9

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What is IRF7769L2TRPBF?

IRF7769L2TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF7769L2TRPBF?

IRF7769L2TRPBF is listed with package reference 2010. The current product description is MOSFET N-CH 100V DIRECTFET L8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF7769L2TRPBF available in stock?

This page currently shows 32283 units in stock and 32283 units available for IRF7769L2TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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