Supply original IRF9Z34NLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET P-CH 55V 19A TO-262

RoHS
Datasheet
Supply original IRF9Z34NLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF9Z34NLPBF

Internal code

TCE000044560

Package

TO-262

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET P-CH 55V 19A TO-262

key Attributes

-

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Product overview

Overview

MOSFET P-CH 55V 19A TO-262

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Mounting Type

Through Hole

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Packaging

Tube

Product Attribute

Published

1997

Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Published
1997
Part Status
Obsolete
Peak Reflow Temperature (Cel)
260
Length
10.67mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
FET Type
P-Channel
Subcategory
Other Transistors
Nominal Vgs
-4 V
Threshold Voltage
-4V
Voltage - Rated DC
-55V
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Through Hole
Number Of Pins
3
Terminal Position
SINGLE
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
3
Drive Voltage (Max Rds On,Min Rds On)
10V
Drain To Source Breakdown Voltage
-55V
Pulsed Drain Current-Max (IDM)
68A
Width
4.826mm
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Current - Continuous Drain (Id) @ 25°C
19A Tc
Rds On (Max) @ Id, Vgs
100m Ω @ 10A, 10V
Fall Time (Typ)
41 ns
Input Capacitance (Ciss) (Max) @ Vds
620pF @ 25V
Current Rating
-19A
Continuous Drain Current (ID)
-19A
Height
9.65mm
Power Dissipation
68W
Power Dissipation-Max
3.8W Ta 68W Tc
Drain-Source On Resistance-Max
0.1Ohm
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer'S Part No.
IRF9Z34NLPBF
Avalanche Energy Rating (Eas)
180 mJ
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Turn On Delay Time
13 ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Turn-Off Delay Time
30 ns
Rise Time
55ns
Configuration
SINGLE WITH BUILT-IN DIODE
Drain To Source Voltage (Vdss)
55V

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What is IRF9Z34NLPBF?

IRF9Z34NLPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF9Z34NLPBF?

IRF9Z34NLPBF is listed with package reference TO-262. The current product description is MOSFET P-CH 55V 19A TO-262, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF9Z34NLPBF available in stock?

This page currently shows 85311 units in stock and 11204 units available for IRF9Z34NLPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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