Supply original IRFH5406TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 60V 40A 8-PQFN

RoHS
Datasheet
Supply original IRFH5406TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRFH5406TRPBF

Internal code

TCE000044551

Package

-

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 60V 40A 8-PQFN

key Attributes

-

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Product overview

Overview

MOSFET N-CH 60V 40A 8-PQFN

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Matte Tin (Sn)

Product Parameter

Number Of Channels

1

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

12 ns

Product Parameter

Configuration

SINGLE WITH BUILT-IN DIODE

Product Parameter

Rise Time

8.7ns

Terminal Finish
Matte Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
12 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
8.7ns
Turn-Off Delay Time
5.4 ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Published
2011
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Max Junction Temperature (Tj)
150°C
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Nominal Vgs
2 V
Continuous Drain Current (ID)
40A
Avalanche Energy Rating (Eas)
45 mJ
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Terminations
5
Number Of Pins
8
Drain To Source Breakdown Voltage
60V
Gate To Source Voltage (Vgs)
20V
Width
5mm
Height
900μm
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
4V
Fall Time (Typ)
3.5 ns
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Package / Case
8-PowerVDFN
Resistance
14.4MOhm
Vgs(Th) (Max) @ Id
4V @ 50μA
Rds On (Max) @ Id, Vgs
14.4m Ω @ 24A, 10V
Power Dissipation-Max
3.6W Ta 46W Tc
Power Dissipation
3.6W
Current - Continuous Drain (Id) @ 25°C
11A Ta 40A Tc
Input Capacitance (Ciss) (Max) @ Vds
1256pF @ 25V
Length
5.9944mm
Manufacturer'S Part No.
IRFH5406TRPBF
Manufacturer Package Identifier
IRFH5406TRPBF
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-N5

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What is IRFH5406TRPBF?

IRFH5406TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRFH5406TRPBF?

IRFH5406TRPBF is listed with package reference -. The current product description is MOSFET N-CH 60V 40A 8-PQFN, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRFH5406TRPBF available in stock?

This page currently shows 60781 units in stock and 53077 units available for IRFH5406TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRFH5406TRPBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

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Yes. This page links to the datasheet for IRFH5406TRPBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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