Supply original IPD050N03LGATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 30V 50A TO252-3

RoHS
Datasheet
Supply original IPD050N03LGATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPD050N03LGATMA1

Internal code

TCE000044526

Package

TO252

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 30V 50A TO252-3

key Attributes

-

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ISO 14001

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CoC Available on Request

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Product overview

Overview

MOSFET N-CH 30V 50A TO252-3

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Factory Lead Time
18 Weeks
Halogen Free
Halogen Free
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Qualification Status
Not Qualified
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Length
6.73mm
Power Dissipation-Max
68W Tc
Pbfree Code
no
Contact Plating
Tin
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Drain To Source Breakdown Voltage
30V
Pin Count
4
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Current - Continuous Drain (Id) @ 25°C
50A Tc
Continuous Drain Current (ID)
50A
Power Dissipation
68W
Series
OptiMOS™
Vgs(Th) (Max) @ Id
2.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Avalanche Energy Rating (Eas)
60 mJ
Manufacturer'S Part No.
IPD050N03LGATMA1
Height
2.41mm
Input Capacitance (Ciss) (Max) @ Vds
3200pF @ 15V
Rds On (Max) @ Id, Vgs
5m Ω @ 30A, 10V
Fall Time (Typ)
3.8 ns
Number Of Elements
1
Turn On Delay Time
6.7 ns
Rise Time
13ns
Turn-Off Delay Time
25 ns
Max Dual Supply Voltage
30V

Common questions

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What is IPD050N03LGATMA1?

IPD050N03LGATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPD050N03LGATMA1?

IPD050N03LGATMA1 is listed with package reference TO252. The current product description is MOSFET N-CH 30V 50A TO252-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IPD050N03LGATMA1 available in stock?

This page currently shows 56583 units in stock and 10564 units available for IPD050N03LGATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IPD050N03LGATMA1 by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

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