Supply original IPD70N04S3-07, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 40V 82A TO252-3

RoHS
Datasheet
Supply original IPD70N04S3-07, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPD70N04S3-07

Internal code

TCE000044525

Package

TO252

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 40V 82A TO252-3

key Attributes

-

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Product overview

Overview

MOSFET N-CH 40V 82A TO252-3

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Matte Tin (Sn)

Product Parameter

Turn On Delay Time

13 ns

Product Parameter

Turn-Off Delay Time

17 ns

Product Parameter

Number Of Elements

1

Product Parameter

Rise Time

8ns

Product Parameter

Max Dual Supply Voltage

40V

Terminal Finish
Matte Tin (Sn)
Turn On Delay Time
13 ns
Turn-Off Delay Time
17 ns
Number Of Elements
1
Rise Time
8ns
Max Dual Supply Voltage
40V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2007
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Halogen Free
Halogen Free
Terminal Form
GULL WING
Qualification Status
Not Qualified
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Pulsed Drain Current-Max (IDM)
280A
Input Capacitance (Ciss) (Max) @ Vds
2700pF @ 25V
Power Dissipation
79W
Power Dissipation-Max
79W Tc
Surface Mount
YES
Pbfree Code
no
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Length
6.5mm
Drive Voltage (Max Rds On,Min Rds On)
10V
Pin Count
4
Additional Feature
ULTRA LOW RESISTANCE
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Drain To Source Breakdown Voltage
40V
Current - Continuous Drain (Id) @ 25°C
82A Tc
Continuous Drain Current (ID)
82A
Height
2.3mm
Series
OptiMOS™
Fall Time (Typ)
7 ns
HTS Code
8541.29.00.95
Drain-Source On Resistance-Max
0.006Ohm
Vgs(Th) (Max) @ Id
4V @ 50μA
Avalanche Energy Rating (Eas)
145 mJ
Rds On (Max) @ Id, Vgs
6m Ω @ 70A, 10V
Manufacturer'S Part No.
IPD70N04S3-07
Drain Current-Max (Abs) (ID)
70A

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What is IPD70N04S3-07?

IPD70N04S3-07 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPD70N04S3-07?

IPD70N04S3-07 is listed with package reference TO252. The current product description is MOSFET N-CH 40V 82A TO252-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 43724 units in stock and 43502 units available for IPD70N04S3-07. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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