Supply original FDMS86101, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 100V 12.4A POWER56

RoHS
Datasheet
Supply original FDMS86101, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

FDMS86101

Internal code

TCE000043199

Package

-

Manufacturer

ON Semiconductor

Key specifications

Serise

PowerTrench®

Min Quantity

1

Description

MOSFET N-CH 100V 12.4A POWER56

key Attributes

-

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Product overview

Overview

MOSFET N-CH 100V 12.4A POWER56

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Number Of Channels

1

Product Parameter

Number Of Elements

1

Product Parameter

Rise Time

11ns

Product Parameter

Turn On Delay Time

15 ns

Product Parameter

Turn-Off Delay Time

27 ns

Product Attribute

Part Status

Active

Number Of Channels
1
Number Of Elements
1
Rise Time
11ns
Turn On Delay Time
15 ns
Turn-Off Delay Time
27 ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Published
2009
Factory Lead Time
10 Weeks
Terminal Position
DUAL
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
ON Semiconductor
Height
1.1mm
Width
6.25mm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Operating Temperature
-55°C~150°C TJ
Resistance
8MOhm
Package / Case
8-PowerTDFN
Series
PowerTrench®
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
5
Number Of Pins
8
Power Dissipation-Max
2.5W Ta 104W Tc
Power Dissipation
2.5W
JEDEC-95 Code
MO-240AA
Gate To Source Voltage (Vgs)
20V
Weight
68.1mg
Length
5.1mm
Pulsed Drain Current-Max (IDM)
200A
Drain To Source Breakdown Voltage
100V
Continuous Drain Current (ID)
60A
Gate Charge (Qg) (Max) @ Vgs
55nC @ 10V
Fall Time (Typ)
7 ns
Threshold Voltage
2.9V
Rds On (Max) @ Id, Vgs
8m Ω @ 13A, 10V
Manufacturer'S Part No.
FDMS86101
Input Capacitance (Ciss) (Max) @ Vds
3000pF @ 50V
Current - Continuous Drain (Id) @ 25°C
12.4A Ta 60A Tc
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-N5

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What is FDMS86101?

FDMS86101 is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDMS86101?

FDMS86101 is listed with package reference -. The current product description is MOSFET N-CH 100V 12.4A POWER56, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDMS86101 available in stock?

This page currently shows 39896 units in stock and 19112 units available for FDMS86101. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDMS86101 by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDMS86101?

Yes. This page links to the datasheet for FDMS86101 by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDMS86101 before approving the order.

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