Supply original SI2303BDS-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET P-CH 30V 1.49A SOT23-3

RoHS
Datasheet
Supply original SI2303BDS-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SI2303BDS-T1-E3

Internal code

TCE000043123

Package

SOT23

Manufacturer

Vishay

Key specifications

Serise

-

Min Quantity

1

Description

MOSFET P-CH 30V 1.49A SOT23-3

key Attributes

-

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Product overview

Overview

MOSFET P-CH 30V 1.49A SOT23-3

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Published

2008

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Packaging

Tape & Reel (TR)

Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
Vishay
Max Supply Voltage
36V
Min Supply Voltage
13V
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Subcategory
Other Transistors
Vgs(Th) (Max) @ Id
3V @ 250μA
Package / Case
TO-236-3, SC-59, SOT-23-3
Resistance
200mOhm
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
3
Width
1.4mm
Drain To Source Breakdown Voltage
30V
Length
3.04mm
Voltage
30V
Power Dissipation
900mW
Fall Time (Typ)
40 ns
Height
1.02mm
Threshold Voltage
-3V
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Nominal Vgs
-3 V
Power Dissipation-Max
700mW Ta
Input Capacitance (Ciss) (Max) @ Vds
180pF @ 15V
Manufacturer'S Part No.
SI2303BDS-T1-E3
Continuous Drain Current (ID)
1.3A
Rds On (Max) @ Id, Vgs
200m Ω @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C
1.49A Ta
Current
164A
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Turn-Off Delay Time
10 ns
Max Dual Supply Voltage
22V
Turn On Delay Time
55 ns
Min Dual Supply Voltage
7V
Number Of Elements
1
Rise Time
40ns

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What is SI2303BDS-T1-E3?

SI2303BDS-T1-E3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SI2303BDS-T1-E3?

SI2303BDS-T1-E3 is listed with package reference SOT23. The current product description is MOSFET P-CH 30V 1.49A SOT23-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SI2303BDS-T1-E3 available in stock?

This page currently shows 97832 units in stock and 19946 units available for SI2303BDS-T1-E3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for SI2303BDS-T1-E3?

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