Supply original SI3447BDV-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET P-CH 12V 4.5A 6-TSOP

RoHS
Datasheet
Supply original SI3447BDV-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SI3447BDV-T1-E3

Internal code

TCE000043115

Package

TSOP

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET P-CH 12V 4.5A 6-TSOP

key Attributes

-

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Product overview

Overview

MOSFET P-CH 12V 4.5A 6-TSOP

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Detailed Specifications

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Product Attribute

REACH Status

REACH Unaffected

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2005
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Termination
SMD/SMT
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
Vishay
Package / Case
SOT-23-6 Thin, TSOT-23-6
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Vgs(Th) (Max) @ Id
1V @ 250μA
Series
TrenchFET®
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Vgs (Max)
±8V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Gate To Source Voltage (Vgs)
8V
Width
3mm
Power Dissipation
1.1W
Gate Charge (Qg) (Max) @ Vgs
14nC @ 4.5V
Fall Time (Typ)
46 ns
Nominal Vgs
-1 V
Threshold Voltage
-1V
Continuous Drain Current (ID)
-4.5A
Current - Continuous Drain (Id) @ 25°C
4.5A Ta
Drain To Source Breakdown Voltage
-12V
Height
990.6μm
Length
3.0988mm
Additional Feature
ULTRA-LOW RESISTANCE
Resistance
53mOhm
Manufacturer'S Part No.
SI3447BDV-T1-E3
Rds On (Max) @ Id, Vgs
40m Ω @ 6A, 4.5V
Power Dissipation-Max
1.1W Ta
Terminal Finish
Matte Tin (Sn)
Turn-Off Delay Time
62 ns
Number Of Elements
1
Turn On Delay Time
20 ns
Dual Supply Voltage
-12V
Drain To Source Voltage (Vdss)
12V
Rise Time
46ns
Reverse Recovery Time
40 ns

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What is SI3447BDV-T1-E3?

SI3447BDV-T1-E3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SI3447BDV-T1-E3?

SI3447BDV-T1-E3 is listed with package reference TSOP. The current product description is MOSFET P-CH 12V 4.5A 6-TSOP, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SI3447BDV-T1-E3 available in stock?

This page currently shows 24249 units in stock and 14168 units available for SI3447BDV-T1-E3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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