Supply original NIF9N05CLT1G, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 59V 2.6A SOT223

RoHS
Datasheet
Supply original NIF9N05CLT1G, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

NIF9N05CLT1G

Internal code

TCE000041854

Package

SOT223

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

MOSFET N-CH 59V 2.6A SOT223

key Attributes

-

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Product overview

Overview

MOSFET N-CH 59V 2.6A SOT223

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Published

2006

Product Attribute

Packaging

Tape & Reel (TR)

REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Termination
SMD/SMT
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Manufacturer
ON Semiconductor
Package / Case
TO-261-4, TO-261AA
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Voltage - Rated DC
52V
Nominal Vgs
1.75 V
Operating Temperature
-55°C~150°C TJ
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
4
Gate To Source Voltage (Vgs)
15V
Additional Feature
LOGIC LEVEL COMPATIBLE
Vgs (Max)
±15V
Number Of Pins
4
Pin Count
4
Rds On (Max) @ Id, Vgs
125m Ω @ 2.6A, 10V
Current Rating
2.6A
Current - Continuous Drain (Id) @ 25°C
2.6A Ta
Continuous Drain Current (ID)
2.6A
Threshold Voltage
1.75V
Resistance
107mOhm
Vgs(Th) (Max) @ Id
2.5V @ 100μA
Drive Voltage (Max Rds On,Min Rds On)
3V 10V
Drain To Source Breakdown Voltage
52V
Gate Charge (Qg) (Max) @ Vgs
7nC @ 4.5V
Fall Time (Typ)
290 ns
Input Capacitance (Ciss) (Max) @ Vds
250pF @ 35V
Power Dissipation-Max
1.69W Ta
Manufacturer'S Part No.
NIF9N05CLT1G
Power Dissipation
1.69W
Lifecycle Status
CONSULT SALES OFFICE (Last Updated: 4 days ago)
JESD-609 Code
e3
RoHS Status
RoHS Compliant
REACH SVHC
No SVHC
Moisture Sensitivity Level (MSL)
3 (168 Hours)
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Number Of Elements
1
Rise Time
290ns
Dual Supply Voltage
52V
Clamping Voltage
52V
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Drain To Source Voltage (Vdss)
59V
Turn-Off Delay Time
1.54 μs

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What is NIF9N05CLT1G?

NIF9N05CLT1G is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for NIF9N05CLT1G?

NIF9N05CLT1G is listed with package reference SOT223. The current product description is MOSFET N-CH 59V 2.6A SOT223, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is NIF9N05CLT1G available in stock?

This page currently shows 95543 units in stock and 56592 units available for NIF9N05CLT1G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for NIF9N05CLT1G by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for NIF9N05CLT1G?

Yes. This page links to the datasheet for NIF9N05CLT1G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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