Supply original IRFU5505PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET P-CH 55V 18A I-PAK

RoHS
Datasheet
Supply original IRFU5505PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRFU5505PBF

Internal code

TCE000040960

Package

TO-251-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET P-CH 55V 18A I-PAK

key Attributes

-

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Product overview

Overview

MOSFET P-CH 55V 18A I-PAK

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

Mounting Type

Through Hole

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Packaging

Tube

Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Factory Lead Time
12 Weeks
Published
1997
Peak Reflow Temperature (Cel)
260
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Nominal Vgs
-4 V
Threshold Voltage
-4V
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC
-55V
Power Dissipation-Max
57W Tc
Current Rating
-18A
Rds On (Max) @ Id, Vgs
110m Ω @ 9.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds
650pF @ 25V
Current - Continuous Drain (Id) @ 25°C
18A Tc
Pulsed Drain Current-Max (IDM)
64A
Power Dissipation
57W
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Width
2.3876mm
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Through Hole
Number Of Pins
3
Terminal Position
SINGLE
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
3
Fall Time (Typ)
16 ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Resistance
110Ohm
Length
6.7056mm
Drain To Source Breakdown Voltage
-55V
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Height
6.22mm
Continuous Drain Current (ID)
-18A
Manufacturer'S Part No.
IRFU5505PBF
Turn-Off Delay Time
20 ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Turn On Delay Time
12 ns
Dual Supply Voltage
-55V
Configuration
SINGLE WITH BUILT-IN DIODE
Drain To Source Voltage (Vdss)
55V
Rise Time
28ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99

Common questions

Product FAQ

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What is IRFU5505PBF?

IRFU5505PBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRFU5505PBF?

IRFU5505PBF is listed with package reference TO-251-3. The current product description is MOSFET P-CH 55V 18A I-PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRFU5505PBF available in stock?

This page currently shows 22088 units in stock and 13079 units available for IRFU5505PBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for IRFU5505PBF?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRFU5505PBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for IRFU5505PBF?

Yes. This page links to the datasheet for IRFU5505PBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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