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FQB34P10TM Transistors - FETs, MOSFETs - Single by ON Semiconductor
FQB34P10TM is a Transistors - FETs, MOSFETs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO-263-3 under the ON Semiconductor brand listing. MOSFET P-CH 100V 33.5A D2PAK. TrustCompo combines the available model, brand, hierarchy, and specification details around FQB34P10TM so buyers can move faster from review to quotation.
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Datasheet
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Documentation support
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Key specifications
Series
QFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH 100V 33.5A D2PAK
key Attributes
-
Datasheet
View FQB34P10TM DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
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AS9120B
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ISO 14001
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ESD Control
Electrostatic handling standards to help protect sensitive components.
Ordering workflow
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2
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Product overview
Overview
The FQB34P10TM is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency switching applications, making it suitable for use in power management systems, DC-DC converters, and other electronic circuits that require reliable and efficient power control.
Key Features:
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Type: The FQB34P10TM is a P-channel MOSFET, which means it is designed to conduct when a negative voltage is applied to its gate relative to its source. This characteristic makes it ideal for high-side switching applications.
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Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of -34V, allowing it to handle a wide range of voltage applications without risk of breakdown.
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Current Rating: It can handle a continuous drain current (I_D) of up to -10A, making it suitable for applications that require significant current flow.
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R_DS(on): The on-resistance (R_DS(on)) is typically low, which minimizes power loss during operation. This is a critical parameter for efficiency in power applications.
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Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is specified to ensure that the MOSFET turns on at a suitable gate voltage, allowing for effective control in various circuit designs.
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Package Type: The FQB34P10TM is typically available in a TO-220 package, which provides good thermal performance and ease of mounting on heat sinks, facilitating effective heat dissipation during operation.
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Thermal Characteristics: The device is designed to operate over a wide temperature range, making it suitable for various environmental conditions. It also has a specified thermal resistance, which helps in managing heat during operation.
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Applications: Common applications for the FQB34P10TM include power supplies, motor control circuits, and other applications where efficient switching and power management are critical.
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): The maximum voltage that can be applied between the gate and source terminals without damaging the device.
- Body Diode Characteristics: The FQB34P10TM includes an intrinsic body diode, which allows for current flow in the reverse direction, useful in certain applications like synchronous rectification.
Conclusion:
The FQB34P10TM from ON Semiconductor is a robust and efficient P-channel MOSFET that is well-suited for a variety of power management applications. Its combination of high voltage and current ratings, low on-resistance, and thermal performance makes it a reliable choice for engineers looking to design efficient and effective electronic circuits.
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Popular Specs Surfaced First
Product Parameter
Turn-Off Delay Time
160 ns
Product Parameter
Terminal Finish
Tin (Sn)
Product Parameter
Number Of Elements
1
Product Parameter
Drain To Source Voltage (Vdss)
100V
Product Parameter
Turn On Delay Time
25 ns
Product Parameter
Rise Time
250ns
Turn-Off Delay Time
160 ns
Terminal Finish
Tin (Sn)
Number Of Elements
1
Drain To Source Voltage (Vdss)
100V
Turn On Delay Time
25 ns
Rise Time
250ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
4 Weeks
Packaging
Tape & Reel (TR)
Lifecycle Status
ACTIVE (Last Updated: 22 hours ago)
Terminal Form
GULL WING
Length
10.67mm
Element Configuration
Single
Manufacturer
ON Semiconductor
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Published
2017
FET Type
P-Channel
Subcategory
Other Transistors
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voltage - Rated DC
-100V
Weight
1.31247g
Series
QFET®
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
2
Drive Voltage (Max Rds On,Min Rds On)
10V
Gate To Source Voltage (Vgs)
25V
Vgs (Max)
±25V
Height
4.83mm
Width
9.65mm
Threshold Voltage
4V
Drain To Source Breakdown Voltage
-100V
Resistance
60MOhm
Power Dissipation
3.75W
Power Dissipation-Max
3.75W Ta 155W Tc
Manufacturer'S Part No.
FQB34P10TM
Avalanche Energy Rating (Eas)
2200 mJ
Rds On (Max) @ Id, Vgs
60m Ω @ 16.75A, 10V
Input Capacitance (Ciss) (Max) @ Vds
2910pF @ 25V
Current Rating
-34A
Continuous Drain Current (ID)
33.5mA
Fall Time (Typ)
210 ns
Current - Continuous Drain (Id) @ 25°C
33.5A Tc
Common questions
Product FAQ
Quick answers for buyers reviewing FQB34P10TM, stock, documentation, and sourcing steps.
What is FQB34P10TM?
FQB34P10TM is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for FQB34P10TM?
FQB34P10TM is listed with package reference TO-263-3. The current product description is MOSFET P-CH 100V 33.5A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is FQB34P10TM available in stock?
This page currently shows 103995 units in stock and 86095 units available for FQB34P10TM. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for FQB34P10TM?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FQB34P10TM by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for FQB34P10TM?
Yes. This page links to the datasheet for FQB34P10TM by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify FQB34P10TM before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FQB34P10TM before approving the order.
Transistors - FETs, MOSFETs - Single
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