NTD3055L104T4G Transistors - FETs, MOSFETs - Single by ON Semiconductor

The NTD3055L104T4G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for high-efficiency switching applications and is particularly suitable for power management in various electronic circuits.

Key Features:

1. Type: N-channel MOSFET

   • The NTD3055L104T4G is an N-channel device, which means it conducts when a positive voltage is applied to the gate relative to the source.

2. Voltage Rating:

   • The maximum drain-source voltage (V_DS) is typically rated at 55V, making it suitable for applications that require handling moderate voltage levels.

3. Current Rating:

   • The device can handle a continuous drain current (I_D) of up to 30A, allowing it to manage significant power loads effectively.

4. R_DS(on):

   • The on-resistance (R_DS(on)) is low, typically around 0.045 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.

5. Gate Threshold Voltage (V_GS(th)):

   • The gate threshold voltage is in the range of 2V to 4V, which indicates the minimum gate voltage required to turn the MOSFET on.

6. Package Type:

   • The NTD3055L104T4G is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.

7. Thermal Characteristics:

   • The device has a maximum junction temperature (T_J) rating of 150°C, allowing it to operate in demanding thermal environments.

8. Applications:

   • This MOSFET is commonly used in power supplies, motor control circuits, and other applications where efficient switching and high current handling are required.

9. Switching Speed:

   • The NTD3055L104T4G features fast switching capabilities, making it ideal for high-frequency applications.

Electrical Characteristics:

• Input Capacitance (C_iss): Typically around 1,200 pF, which affects the speed of the device during switching.
• Output Capacitance (C_oss): Approximately 200 pF, influencing the performance in high-frequency applications.
• Reverse Transfer Capacitance (C_rss): About 50 pF, which is relevant for feedback and stability in circuits.

Conclusion:

The NTD3055L104T4G from ON Semiconductor is a robust and efficient N-channel MOSFET that is well-suited for a variety of power management applications. Its combination of high current handling, low on-resistance, and good thermal performance makes it a popular choice among engineers designing power electronics.